Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.

The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was built using two stages of an op amp transimpedance amplifier. To reduce voltage noise, eight-paralleled low noise discrete JFETs were used in the first stage. The designed amplifier was then compared to commercial ones. Its measured value of voltage noise spectral density is around 24 nV/√ Hz, 3 nV/√ Hz, 0.95 nV/√Hz and 0.6 nV/√ Hz at the frequency of 0.1, 1, 10 and 100 Hz, respectively. A −3 dB frequency response is from ∼ 20 mHz to ∼ 600 kHz.