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Abstract

In this paper, a study of the lightning phenomenon and its harmful effect on Aqaba Thermal Power Station (ATPS), located in the south-western border of Jordan, is presented using the Electromagnetic Transients Program – Alternative Transients Program (EMTP- ATP). This study has been arisen due to an installation need of appropriate lightning arresters (LAs) for the 15/410 kV step-up transformers of the ATPS to eliminate the destructive effect of lightning. The simulation is carried out for two cases, once without using LAs and once more with using them. Two scenarios are applied for each of these cases, once when lightning strikes the primary side of the transformer and once more when it strikes the secondary side. The results obtained by the simulation indicate the necessity of LAs installation. This study, with using the EMTP-ATP program, is done for the first time with additional details that help researchers, designers, and engineers to get a broad overview of the ATPS in order to protect it against lightning.

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Authors and Affiliations

Wael Fawzi Abu Shehab
Shehab Abdulwadood Ali
Mohammad Ibrahim Alsharari
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Abstract

In this research work, a Cylindrical Surrounding Double-Gate (CSDG) MOSFET design in a stacked-Dual Metal Gate (DMG) architecture has been proposed to incorporate the ability of gate metal variation in channel field formation. Further, the internal gate's threshold voltage (VTH1) could be reduced compared to the external gate (VTH2) by arranging the gate metal work-function in Double Gate devices. Therefore, a device design of CSDG MOSFET has been realized to instigate the effect of Dual Metal Gate (DMG) stack architecture in the CSDG device. The comparison of device simulation shown optimized electric field and surface potential profile. The gradual decrease of metal work function towards the drain also improves the Drain Induced Barrier Lowering (DIBL) and subthreshold characteristics. The physics-based analysis of gate stack CSDG MOSFET that operates in saturation involving the analogy of cylindrical dual metal gates has been considered to evaluate the performance improvements. The insights obtained from the results using the gate-stack dual metal structure of CSDG are quite promising, which can serve as a guide to further reduce the threshold voltage roll-off, suppress the Hot Carrier Effects (HCEs) and Short Channel Effects (SCEs).
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Authors and Affiliations

Abha Dargar
1
Viranjay M. Srivastava
1

  1. Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban, 4041, South Africa

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