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Number of results: 10
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Abstract

In this paper we discuss some physical limits for scaling of transistors and conducting paths inside of semiconductor integrated circuits (ICs). Since 40 years only a semiconductor technology, mostly the CMOS and the TTL technologies, are used for fabrication of integrated circuits on an industrial scale. Miniaturization of electronic devices in integrated circuits has technological limits and physical limits as well. In 2010 best parameters of commercial ICs shown the Intel Core i5-670 processor manufactured in the technology of 32 nm. Its clock frequency in turbo mode is 3.73 GHz. A forecast of the development of the semiconductor industry (ITRS 2011) predicts that sizes of electronic devices in ICs circuits will be smaller than 10 nm in the next 10 years. At least 5 physical effects should be taken into account if we discuss limits of scaling of integrated circuits.

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Authors and Affiliations

Waldemar Nawrocki
Yury M. Shukrinov
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Abstract

Evolution of many high technologies such as microelectronics, microsystem technology and nanotechnology involves design, application and testing of technical structures, whose size is being decreased continuously. Scanning probe microscopes (SPM) are therefore increasingly used as diagnostic and measurement instruments. Consequently the demand for standardized calibration routines for this kind of equipment rises. Up to now, there has been no in generally accepted guideline on how to perform SPM calibration procedure. In this article we discuss calibration scheme and focus on several critical aspects of SPM characterization e.g. the determination of the static and dynamic physical properties of the cantilever, the influence factors which need to be considered when plotting a scheme for the calibration of the force and displacement sensitivity.

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Authors and Affiliations

T. Gotszalk
A. Marendziak
K. Kolanek
R. Szeloch
P. Grabiec
M. Zaborowski
P. Janus
I.W. Rangelow
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Abstract

Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence of InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence of compositional fluctuations, which localized charge carriers, was established. A model, which described the effect of the fluctuations on the rate of the radiative recombination, the shape of luminescence spectra and the position of their peaks, was shown to describe experimental photoluminescence data quite reasonably. For InAs(Sb,P) LED nanoheterostructures, at low temperatures (4.2–100 K) stimulated emission was observed. This effect disappeared with the temperature increasing due to the resonant ‘switch-on’ of the Auger process involving transition of a hole to the spin-orbit-splitted band. Influence of other Auger processes on the emissive properties of the nanoheterostructures was also observed. Prospects of employing II–VI and III–V nanostructures in light-emitting devices operating in the mid-infrared part of the spectrum are discussed.

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Authors and Affiliations

K.D. Mynbaev
A.V. Shilyaev
A.A. Semakova
E.V. Bykhanova
N.L. Bazhenov
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Abstract

Already published data for the optical band gap (Eg) of thin films and nanostructured copper zinc tin sulphide (CZTS) have been reviewed and combined. The vacuum (physical) and non-vacuum (chemical) processes are focused in the study for band gap comparison. The results are accumulated for thin films and nanostructured in different tables. It is inferred from the re- view that the nanostructured material has plenty of worth by engineering the band gap for capturing the maximum photons from solar spectrum.

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Authors and Affiliations

N. Ali
R. Ahmed
A. Bakhtiar-Ul-Haq Shaari
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Abstract

The research focused on TiO2 nanostructures environmental applications due to the special characteristics that displayed degradation of the organic compounds into environmentally friendly products through exposure to UV light. The protocol behind obtaining the nanostructures involved the use of a Ti material exposed to alkaline treatment and advanced oxidation using NaOH solution and acetone. These studied nanostructures were analyzed extensively by using methods such as scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) for characterizing the elements, compounds and morphological properties of the material. These differences in morphology is attributed to different NaOH solution concentrations. The Ti sheets were immersed into NaOH and acetone mixed solutions for 72 hours. The best results were recorded by using 30% NaOH solution. After obtaining the 3D structures, which improve specific surface and contact area with the environment, the samples were tested under UV light in order to degrade methylene blue in order to determine their photocatalytic performance.
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Authors and Affiliations

C.I. Tarcea
1
ORCID: ORCID
C.M. Pantilimon
1
ORCID: ORCID
G. Coman
1
ORCID: ORCID
A.A. Turcanu
1
ORCID: ORCID
A.M. Predescu
1
ORCID: ORCID
E. Matei
1
ORCID: ORCID
A.C. Berbecaru
1
ORCID: ORCID
C. Predescu
1
ORCID: ORCID

  1. University Politehnica of Bucharest, Faculty of Materials Science and Engineering, Department of Materials Processing and Ecometallurgy, 313 Splaiul Independentei, 060042, Bucharest, Romania
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Abstract

In this work, zinc oxide (ZnO) thin films are deposited on glass substrate using the sol-gel spin coating technique. The effect of annealing temperature on structural properties was investigated. The ZnO sol-gel was produced from zinc acetate dehydrate as the starting material with iso-propanol alcohol as the stabilizer. The ratio was controlled, distilled water and diethanolamine as the solvent mixing on a magnetic stirrer for an hour under constant heat of 60°C. The ZnO thin film was deposited using the spin coating technique with the speed of 3000 rpm for 30 minutes before the sample undergoes pre-heat in the oven at the temperature of 100°C for 10 minutes. The sample was annealing in the furnace for an hour at 200°C, 350°C, and 500°C. The X-ray diffraction (XRD) analysis confirms that hexagonal wurtzite structure with zincite and zinc acetate hydroxide hydrate composition. The thin films surface roughness was analyzed using an atomic force microscope (AFM) and scanning electron microscope (SEM) for surface morphology observation.
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Authors and Affiliations

R. Hussin
1 2 3
ORCID: ORCID
F. Hanafi
2
R.A. Rashid
1
Z. Harun
2 4
Z. Kamdi
2
S.A. Ibrahim
1 4
A.R. Ainuddin
2
W. Rahman
5 3
A.M. Leman
1 3

  1. Universiti Tun Hussein Onn Malaysia, Faculty of Engineering Technology, Department of Mechanical Engineering Technology, Jalan Edu Hub Gunasama1, Pagoh Edu Hub, KM1, Jln Panchor, 84600 Pagoh Johor, Malaysia
  2. Universiti Tun Hussein Onn Malaysia, Faculty of Mechanical and Manufacturing Engineering, Parit Raja, 86400 Batu Pahat, Johor, Malaysia
  3. Universiti Malaysia Perlis, Center of Excellence Geopolymer and Green Technology (CEGeoGTech), Perlis, Malaysia
  4. Universiti Tun Hussein Onn Malaysia, Faculty of Mechanical and Manufacturing Engineering, Integrated Material and Process, Advanced Manufacturing & Materials Centre, Parit Raja, 86400 Batu Pahat, Johor, Malaysia
  5. Universiti Malaysia Perlis, Faculty of Mechanical Engineering Technology, Perlis, Malaysia
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Abstract

The electron field and photo-field emission from GaN nanostructures has been analyzed in this review. In order to explain the obtained experimental results, a model was proposed taking into account the change in carrier concentration distribution in the main and the satellite valley during the emission process. The lowering of work function (due to the increased number of carriers in the satellite valley) can explain the decrease in the Fowler-Nordheim plot slope. It was shown that the energy difference between the main and satellite valley in GaN was decreased in the case of quantum confinement, thus increasing the probability of electron transition from Γ to X valley at same electric fields.

Investigations of electron photo-field emission demonstrated that the Fowler–Nordheim plots of the emission current have different slopes for nonilluminated and illuminated devices. A model based on the electron emission from valleys having different specific electron affinities is proposed to explain the experimental results. In the absence of illumination the emission takes place only from the lower valley. Upon UV illumination and presence of a high electric field at the emitter tip, the upper valley of the conduction band appears to be occupied by electrons generated at the valence band.

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Authors and Affiliations

V. Litovchenko
A. Evtukh
A. Grygoriev
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Abstract

This work summarises investigations focused on the photoanode impact on the photovoltaic response of dye-sensitized solar cells. This is a comparison of the results obtained by the authors’ research team with literature data. The studies concern the effect of the chemical structure of the applied dye, TiO2 nanostructure, co-adsorbents addition, and experimental conditions of the anode preparation. The oxide substrates were examined using a scanning electron microscope to determine the thickness and structure of the material. The TiO2 substrates with anchored dye molecules were also tested for absorption properties in the UV-Vis light range, largely translating into current density values. Photovoltaic parameters of the fabricated devices with sandwich structure were obtained from current-voltage measurements. During tests conducted with the N719 dye, it was found that devices containing an 8.4 µm thick oxide semiconductor layer had the highest efficiency (5.99%). At the same time, studies were carried out to determine the effect of the solvent and it was found that the best results were obtained using an ACN : tert-butanol mixture (5.46%). Next, phenothiazine derivatives (PTZ-1–PTZ-6) were used to prepare the devices; among the prepared solar cells, the devices containing PTZ-2 and PTZ-3 had the highest performance (6.21 and 6.22%, respectively). Two compounds designated as Th-1 and M-1 were used to prepare devices containing a dye mixture with N719.
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Bibliography

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    1410–1420 (2018). https://doi.org/10.1007/s10825-018-1226-5
  42. Nath, N. C. D., Lee, H. J. Choi, W.-Y. & Lee, J.-J. Electrochemical approach to enhance the open-circuit voltage (Voc) of dye-sensitized solar cells (DSSCs). Acta 109, 39–45 (2013). https://doi.org/10.1016/J.ELECTACTA.2013.07.057
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Authors and Affiliations

Paweł Gnida
1
ORCID: ORCID
Aneta Slodek
2
ORCID: ORCID
Ewa Schab-Balcerzak
2 1
ORCID: ORCID

  1. Centre of Polymer and Carbon Materials, Polish Academy of Sciences, 34 M. Curie-Sklodowska St., 41-819 Zabrze, Poland
  2. Institute of Chemistry, University of Silesia, 9 Szkolna St., 40-006 Katowice, Poland
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Abstract

The structural, morphological and photoluminescent properties of thermally evaporated neodymium oxide (Nd2O3) thin films deposited onto nanostructured silicon (Si-ns) are reported. Si-ns embedded in silicon nitride (SiN) thin films are prepared by plasma-enhanced chemical vapour deposition (PECVD). SiN and Nd2O3 thin films uniformity and Si-ns formation are confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The presence of neodymium (Nd), silicon (Si), oxygen (O), and phosphorus (P) is investigated by energy-dispersive spectroscopy (EDS) and secondary ion mass spectrometry (SIMS). Post-annealing SIMS profile indicates an improvement of the homogeneity of activated P distribution in Si bulk. The X-ray diffraction (XRD) combined with Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) have been employed to determine amorphous silicon (a-Si), crystalline silicon (c-Si), Nd2O3 and SiN phases present in the Nd2O3-SiN bilayers with their corresponding chemical bonds. After annealing, a Raman shift toward lower wavenumbers is recorded for the Si peak. XPS data reveal the formation of Nd2O3 thin films with Nd-O bonding incorporating trivalent Nd ions (Nd3+). Strong room-temperature photoluminescence is recorded in the visible light range from the Si-ns. Nd-related photoluminescent emission in the near infrared (NIR) range is observed at wavelengths of 1025–1031 nm and 1083 nm, and hence is expected to improve light harvesting of Si-based photovoltaic devices.
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Authors and Affiliations

Amine Mefoued
1 2
ORCID: ORCID
Bedra Mahmoudi
1
Nasser Benrekaa
2
Faiza Tiour
1
Hamid Menari
1
Abdelyamine Naitbouda
3
Amar Manseri
1
Afaf Brik
1
Salah Mezghiche
1
Moustafa Debbab
4

  1. Centre de Recherche en Technologie des Semi-conducteurs pour l’Énergétique (CRTSE), 02 Bd Frantz Fanon BP140, Alger–7 merveilles, 16027 Algiers, Algeria
  2. Faculté de Physique, Université des Sciences et de la Technologie Houari Boumediene (USTHB), BP 32 Bab-Ezzouar, 16111 Algiers, Algeria
  3. Centre de Développement des Technologies Avancées (CDTA), Cité 20 août 1956, 16081 Algiers, Algeria
  4. Université Abou Bekr Belkaid BP 230, 13000 Chetouane, Tlemcen, Algeria
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Abstract

The rod specimens were produced from Pr9Fe50 + xCo13Zr1Nb4B23 – x (x = 0, 5, 8) alloys using the suction-casting technique. Subsequent devitrification annealing of those samples resulted in the change of their phase structure and magnetic properties. For annealed specimens of all investigated compositions, the Rietveld analyses of X-ray diffractions have shown the presence of three crystalline phases: the hard magnetic Pr2Fe11.2Co2.8B, soft magnetic α-Fe, and paramagnetic Pr1 + xFe4B4, which have precipitated within the amorphous matrix. This technique allowed us to determine the weight fractions of constituent phases. Furthermore, the microstructural changes with the alloy composition were observed. Magnetic measurements of annealed rods allowed us to calculate the switching field distributions (SFD) and δM plots in order to determine the strength and character of magnetic interactions between grains of constituent phases.
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Authors and Affiliations

Katarzyna Pawlik
1

  1. Department of Physics, Faculty of Production Engineering and Materials Technology, Częstochowa University of Technology, Al. Armii Krajowej 19, 42-200 Częstochowa, Poland

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