Search results

Filters

  • Journals
  • Authors
  • Keywords
  • Date
  • Type

Search results

Number of results: 3
items per page: 25 50 75
Sort by:
Download PDF Download RIS Download Bibtex

Abstract

We demonstrate MW-level, single resonance optical parametric oscillator, based on KTP Type-II crystal with noncritical phase-matching. The OPO is pumped by electro-optically Q-switched Nd:YAG slab laser providing 55 mJ of pulse energy. At the output, we achieved 28 mJ of signal pulse energy at 1.57 μm with 51% conversion efficiency, corresponding to 1.4 MW of peak power.

Go to article

Authors and Affiliations

M. Kaskow
L. Gorajek
W. Zendzian
J. Jabczynski
Download PDF Download RIS Download Bibtex

Abstract

The paper presents an original method of measuring the actual chromite content in the circulating moulding sand of foundry. This type of

material is applied for production of moulds. This is the case of foundry which most frequently perform heavy casting in which for the

construction of chemical hardening mould is used, both the quartz sand and chromite sand. After the dry reclamation of used moulding

sand, both types of sands are mixed in various ratios resulting that in reclaimed sand silos, the layers of varying content of chromite in

mixture are observed. For chromite recuperation from the circulating moulding sand there are applied the appropriate installations

equipped with separate elements generating locally strong magnetic field. The knowledge of the current ratio of chromite and quartz sand

allows to optimize the settings of installation and control of the separation efficiency. The arduous and time-consuming method of

determining the content of chromite using bromoform liquid requires operational powers and precautions during using this toxic liquid.

It was developed and tested the new, uncomplicated gravimetric laboratory method using powerful permanent magnets (neodymium).

The method is used in the production conditions of casting for current inspection of chromite quantity in used sand in reclamation plant.

Go to article

Authors and Affiliations

Z. Ignaszak
J-B. Prunier
Download PDF Download RIS Download Bibtex

Abstract

The structural, morphological and photoluminescent properties of thermally evaporated neodymium oxide (Nd2O3) thin films deposited onto nanostructured silicon (Si-ns) are reported. Si-ns embedded in silicon nitride (SiN) thin films are prepared by plasma-enhanced chemical vapour deposition (PECVD). SiN and Nd2O3 thin films uniformity and Si-ns formation are confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The presence of neodymium (Nd), silicon (Si), oxygen (O), and phosphorus (P) is investigated by energy-dispersive spectroscopy (EDS) and secondary ion mass spectrometry (SIMS). Post-annealing SIMS profile indicates an improvement of the homogeneity of activated P distribution in Si bulk. The X-ray diffraction (XRD) combined with Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) have been employed to determine amorphous silicon (a-Si), crystalline silicon (c-Si), Nd2O3 and SiN phases present in the Nd2O3-SiN bilayers with their corresponding chemical bonds. After annealing, a Raman shift toward lower wavenumbers is recorded for the Si peak. XPS data reveal the formation of Nd2O3 thin films with Nd-O bonding incorporating trivalent Nd ions (Nd3+). Strong room-temperature photoluminescence is recorded in the visible light range from the Si-ns. Nd-related photoluminescent emission in the near infrared (NIR) range is observed at wavelengths of 1025–1031 nm and 1083 nm, and hence is expected to improve light harvesting of Si-based photovoltaic devices.
Go to article

Authors and Affiliations

Amine Mefoued
1 2
ORCID: ORCID
Bedra Mahmoudi
1
Nasser Benrekaa
2
Faiza Tiour
1
Hamid Menari
1
Abdelyamine Naitbouda
3
Amar Manseri
1
Afaf Brik
1
Salah Mezghiche
1
Moustafa Debbab
4

  1. Centre de Recherche en Technologie des Semi-conducteurs pour l’Énergétique (CRTSE), 02 Bd Frantz Fanon BP140, Alger–7 merveilles, 16027 Algiers, Algeria
  2. Faculté de Physique, Université des Sciences et de la Technologie Houari Boumediene (USTHB), BP 32 Bab-Ezzouar, 16111 Algiers, Algeria
  3. Centre de Développement des Technologies Avancées (CDTA), Cité 20 août 1956, 16081 Algiers, Algeria
  4. Université Abou Bekr Belkaid BP 230, 13000 Chetouane, Tlemcen, Algeria

This page uses 'cookies'. Learn more