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Abstract

The proper designing of PV systems requires the use of advanced building energy simulation techniques. It allows to design the best position of the PV array, as well as the right quantity of produced energy in different cases. On the other hand the PV efficiency is not only a constant value but changes according to temperature and solar radiation. This paper is devoted to estimate the simultaneous effect of both weather factors on PV efficiency. The task was achieved by numerical simulation and ESP-r software. Computer simulations have been carried out with the use of the Typical Meteorological Year data for Warsaw (52°N 21°E). The greatest influence of temperature on the efficiency of solar energy conversion was observed for crystalline silicon cells. The influence of the boundary conditions assumed in the study is ignored for amorphous silicon cells in the summer period and regardless of the material type in the winter period.

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Authors and Affiliations

D. Heim
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Abstract

The paper reports on a long-wave infrared (cut-off wavelength ~ 9 μm) HgCdTe detector operating under nbiased condition and room temperature (300 K) for both short response time and high detectivity operation. The ptimal structure in terms of the response time and detectivity versus device architecture was shown. The response time of the long-wave (active layer Cd composition, xCd = 0.19) HgCdTe detector for 300 K was calculated at a level of τs ~ 1 ns for zero bias condition, while the detectivity − at a level of D* ~ 109 cmHz1/2/W assuming immersion. It was presented that parameters of the active layer and P+ barrier layer play a critical role in order to reach τs ≤ 1 ns. An extra series resistance related to the processing (RS+ in a range 5−10 Ω) increased the response time more than two times (τs ~ 2.3 ns).

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Authors and Affiliations

Piotr Martyniuk
Małgorzata Kopytko
Paweł Madejczyk
Aleksandra Henig
Kacper Grodecki
Waldemar Gawron
Jarosław Rutkowski
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Abstract

By simulating the actual working conditions of a cable, the temperature variation rule of different measuring points under different load currents was analyzed. On this basis, a three-dimensional finite element model (FEM) was established, and the difference and influence factors between the simulation temperature and the experimental measured value were discussed, then the influence of thermal conductivity on the operating temperature of the conductor layer was studied. Finally, combined with the steady-state thermal conductivity model and the experimental measured data, the relation between thermal conductivity and load current was obtained.

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Authors and Affiliations

Xiaokai Meng
Peijie Han
Yongxin Liu
Zhumao Lu
Tao Jin
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Abstract

The performance of HgCdTe barrier detectors with cut-off wavelengths up to 3.6 μm fabricated using metaloorganic chemi- cal vapour deposition operated at high temperatures is presented. The detectors’ architecture consists of four layers: cap contact, wide bandgap barrier, absorber and bottom contact layer. The structures were fabricated both with n- and p-type absorbing layers. In the paper, different design of cap-barrier structural unit (n-Bp′, n+-Bp′, p+-Bp) were analysed in terms of various electrical and optical properties of the detectors, such as dark current, current responsivity time constant and detectivity.

The devices with a p-type cap contact exhibit very low dark current densities in the range of (2÷3)×10-4 A/cm2 at 230 K and the maximum photoresponse of about 2 A/W in wide range of reverse bias voltage. The time constant of measured de- vices with n-type cap contact and p-type absorbing drops below 1 ns with reverse bias while the detectivity is at the level of 1010 cm Hz1/2/W.

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Authors and Affiliations

Małgorzata Kopytko
ORCID: ORCID
A. Kębłowski
W. Gawron
P. Madejczyk
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Abstract

This paper presents examples of infrared detectors with mercury cadmium telluride elaborated at the Institute of Applied Physics, Military University of Technology and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 µm to 14 µm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.
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Authors and Affiliations

Paweł Madejczyk
1
ORCID: ORCID
Waldemar Gawron
1 2
ORCID: ORCID
Jan Sobieski
2
ORCID: ORCID
Piotr Martyniuk
1
ORCID: ORCID
Jarosław Rutkowski
1
ORCID: ORCID

  1. Institute of Applied Physics, Military University of Technology, 2 gen. Kaliskiego St., 00-908 Warsaw, Poland
  2. Vigo Photonics S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland
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Abstract

The paper contains a description of the geometry of Beveloid gears. It describes the distribution of forces in a Beveloid gear with a straight tooth line and a helical tooth line. The paper presents research on the experimentally determined parameters of transmission operation, including the sound pressure level and the amount of heat emitted during operation. The design and construction of the test stand were presented. The research methodology was described. Operational tests are carried out on household appliances with Beveloid gears: Grinder and Jam mixer. Thanks to an appropriately selected narrowing angle, estimated values of service life extension of the above-mentioned transmissions are given.
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Bibliography

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  17.  M. Sobolak and P. Strojny, “Effect of the narrowing angle in beveliod gear on the temperature profile on the active flank of tooth,” Adv. Sci. Technol. Res. J., vol. 7, pp. 67–69, Dec. 2013.
  18.  M. Płocica and A. Marciniec, Methodology of Preparing Hypoid Gears for Vibroacoustic Diagnostics in Laboratory Conditions, Oficyna Wydawnicza Politechniki Warszawskiej, Warszawa, 2018.
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Authors and Affiliations

Piotr Strojny
1

  1. The Faculty of Mechanical Engineering and Aeronautics, Rzeszow University of Technology, al. Powstańców Warszawy 12, 35-959 Rzeszów, Poland
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Abstract

In the last decade several papers have announced usefulness of two-dimensional materials for high operating temperature photodetectors covering long wavelength infrared spectral region. Transition metal dichalcogenide photodetectors, such as PdSe 2/MoS 2 and WS 2/HfS 2 and WS 2/HfS 2 heterojunctions, have been shown to achieve record detectivities at room temperature (higher than HgCdTe photodiodes). Under these circumstances, it is reasonable to consider the advantages and disadvantages of two-dimensional materials for infrared detection. This review attempts to answer the question thus posed.
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Authors and Affiliations

Antoni Rogalski
1
ORCID: ORCID

  1. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
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Abstract

In the last decade, infrared imaging detectors trend has gone for smaller pixels and larger formats. Most of the time, this scaling is carried out at a given total sensitive area for a single focal plane array. As an example, QVGA 30 µm pitch and VGA 15 µm pitch exhibit exactly the same sensitive area. SXGA 10 µm pitch tends to be very similar, as well. This increase in format is beneficial to image resolution. However, this scaling to even smaller pixels raises questions because the pixel size becomes similar to the IR wavelength, but also to the typical transport dimensions in the absorbing material. Hence, maintaining resolution for such small pixel pitches requires a good control of the modulation transfer function and quantum efficiency of the array, while reducing the pixel size. This might not be obtained just by scaling the pixel dimensions. As an example, bulk planar structures suffer from excessive lateral diffusion length inducing pixel-to-pixel cross talk and thus degrading the modulation transfer function. Transport anisotropy in some type II superlattice structures might also be an issue for the diffusion modulation transfer function. On the other side, mesa structures might minimize cross talk by physically separating pixels, but also tend to degrade the quantum efficiency due to a non-negligible pixel fill factor shrinking down the pixel size. This paper discusses those issues, taking into account different material systems and structures, in the perspective of the expected future pixel pitch infrared focal plane arrays.
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Authors and Affiliations

Olivier Gravrand 
1
Nicolas Baier 
1
Alexandre Ferron 
1
Florent Rochette  
1
Clément Lobre 
1
Jocelyn Bertoz 
2
Laurent Rubaldo
2

  1. CEA-LETI, 17 des Martyrs St., 38054 Grenoble, France
  2. Lynred, BP 21, 38113 Veurey-Voroize, France

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