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Abstract

Modified Bohm’s formalism was applied to solve the problem of abstruse layer depth profiles measured by the Auger electron spectroscopy technique in real physical systems. The desorbed carbon/passive layer on an NiTi substrate and the adsorbed oxygen/ surface of an NiTi alloy were studied. It was shown that the abstruse layer profiles can be converted to real layer structures using the modified Bohm’s theory, where the quantum potential is due to the Auger electron effect. It is also pointed out that the stationary probability density predicts the multilayer structures of the abstruse depth profiles that are caused by the carbon desorption and oxygen adsorption processes. The criterion for a kind of break or “cut” between the physical and unphysical multilayer systems was found. We conclude with the statement that the physics can also be characterised by the abstruse measurement and modified Bohm’s formalism.

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Authors and Affiliations

E. Rówiński
M. Pietruszka
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Abstract

Tin dioxide (SnO2) is an n-type semiconductor and has useful characteristics of high transmittance, excellent electrical properties, and chemical stability. Accordingly, it is widely used in a variety of fields, such as a gas sensor, photocatalyst, optoelectronics, and solar cell. In this study, SnO2 films are deposited by thermal atomic layer deposition (ALD) at 180°C using Tetrakis(dimethylamino)tin and water. A couple of 5.9, 7.4 and 10.1nm-thick SnO2 films are grown on SiO2/Si substrate and then each film is annealed at 400°C in oxygen atmosphere. Current transport of SnO2 films are analyzed by measuring current – voltage characteristics from room temperature to 150°C. It is concluded that electrical property of SnO2 film is concurrently affected by its semiconducting nature and oxidative adsorption on the surface.

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Authors and Affiliations

Seong Yu Yoon
Byung Joon Choi
ORCID: ORCID

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