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First record of a novel begomovirus and satellites associated with leaf curl disease of passion fruit from India

Venkataravanappa Venkataravanappa Lakshminarayana Reddy Cheegatagere Narasimha Reddy Shridhar Hiremath Bommanahalli Munivenkategowda Muralidhara Suryanarayana Vishweswarasastry Virendra K. Baranwal Krishna Reddy Manem
Journal of Plant Protection Research | 2022 | vol. 62 | No 1 | 78-92 | DOI: 10.24425/jppr.2022.140303
Keywords begomovirus passion fruit phylogenetic analysis recombination sequence demarcation tool (SDT)
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Abstract

Passion fruit is an important fruit crop grown in parts of southern and north-eastern states of India. Leaf curl symptoms typical to begomovirus infection were observed on passion fruit plants at three locations of Madikeri District, Karnataka State, India. The disease incidence ranged from 10–20% in all the locations. In order to determine if the begomovirus was associated with leaf curl disease of passion fruit, 20 infected samples collected from different locations were subjected to PCR analysis using primers specific to begomovirus. This resulted in an expected PCR product of ~1.2 kb. Sequence analysis of these products revealed that they have more than 98% similarity among them and have similarity with other begomoviruses. Complete genome sequencing of begomovirus associated with one sample (PF1 collected from CHES, Madikeri) was done using RCA. Further, sequencing of betasatellite and alphasatellite was done after PCR amplification using specific primers. Complete DNA-A sequence of PF-isolate with other begomoviruses revealed that it shared nucleotide (nt) identity of 87.8 to 88.8% with Ageratum enation virus. This indicated the association of a novel begomovirus with leaf curl disease of passion fruit in India, for which we propose the name, Passion fruit leaf curl virus (PFLCuV) [IN-Kar-18]. PFLCuV associated betasatellite shared 98.3% sequence identity with Tomato leaf curl Bangladesh betasatellite, while alphasatellite had 95.7% sequence identity with Cotton leaf curl Multan alphasatellite. Recombinant analysis indicated a major component of PFLCuV DNA-A may have originated from a recombination of earlier reported begomoviruses. Recombination as well as GC plot analysis showed that the recombination occurred in the genome regions having low GC content regions of PFLCuV. However, there is no evidence of recombination in alphasatellite and betasatellite associated with leaf curl disease of passion fruit. This is the first record of a novel begomovirus and satellites associated with leaf curl disease of passion fruit from India.
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Authors and Affiliations

Venkataravanappa Venkataravanappa
1
Lakshminarayana Reddy Cheegatagere Narasimha Reddy
2
Shridhar Hiremath
2
Bommanahalli Munivenkategowda Muralidhara
3
Suryanarayana Vishweswarasastry
4
Virendra K. Baranwal
5
Krishna Reddy Manem
6
  1. Central Horticultural Experimental Station, Indian Council of Agricultural Research – Indian Institute of Horticultural Research, Chettalli, Madikeri, Karnataka, India
  2. Department of Plant Pathology, University of Agricultural Sciences, Gandhi Krishi Vigyana Kendra, Bangalore, Karnataka, India
  3. Indian Council of Agricultural Research – Directorate of Cashew Research, Puttur, Karnataka, India
  4. Department of Forest Biology and Tree Improvement, University of Agricultural Science, Dharwad, Sirsi, Karnataka, India
  5. Division of Plant Pathology, Indian Council of Agricultural Research – Indian Agricultural Research Institute, New Delhi, India
  6. Indian Council of Agricultural Research – Indian Institute of Horticultural Research, Hessaraghatta Lake, Bangalore, Karnataka, India

The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristics

Tetiana Manyk Jarosław Rutkowski Paweł Madejczyk Waldemar Gawron Piotr Martyniuk
Opto-Electronics Review | 2022 | 30 | 2 | e141596 | DOI: 10.24425/opelre.2022.141596
Keywords HgCdTe MWIR detectors dark current I-V characteristics recombination
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Abstract

A theoretical analysis of the mid-wavelength infrared range detectors based on the HgCdTe materials for high operating temperatures is presented. Numerical calculations were compared with the experimental data for HgCdTe heterostructures grown by the MOCVD on the GaAs substrates. Theoretical modelling was performed by the commercial platform SimuAPSYS (Crosslight). SimuAPSYS fully supports numerical simulations and helps understand the mechanisms occurring in the detector structures. Theoretical estimates were compared with the dark current density experimental data at the selected characteristic temperatures: 230 K and 300 K. The proper agreement between theoretical and experimental data was reached by changing Auger-1 and Auger-7 recombination rates and Shockley-Read-Hall carrier lifetime. The level of the match was confirmed by a theoretical evaluation of the current responsivity and zero-bias dynamic resistance area product (R0A) of the tested detectors.
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Authors and Affiliations

Tetiana Manyk
1
ORCID: ORCID
Jarosław Rutkowski
1
ORCID: ORCID
Paweł Madejczyk
1
ORCID: ORCID
Waldemar Gawron
1 2
ORCID: ORCID
Piotr Martyniuk
1
ORCID: ORCID
  1. Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland
  2. VIGO System S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland

Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP

Osvaldo M. Braga Cristian A. Delfino Rudy M. S. Kawabata Luciana D. Pinto Gustavo S. Vieira Maurício P. Pires Patricia L. Souza Euclydes Marega John A. Carlin Sanjay Krishna
Opto-Electronics Review | 2023 | 31 | special issue | e144562 | DOI: 10.24425/opelre.2023.144562
Keywords simulation residual doping recombination velocity surface passivation regrowth
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Abstract

The viability of epitaxial regrowth of non-intentionally doped InP to passivate lateral mesa surfaces of InGaAs photodiodes lattice-matched to InP is investigated, evaluating whether the residual doping of the regrown layer can be responsible for an unexpected increase of the surface current. The effect of residual doping is evaluated via numerical calculations of dark current, considering the range of doping concentrations expected for non-intentionally doped InP. The calculations show that the increase in dark current due to the residual doping of the regrown InP layer is not enough to justify the observed increase in surface current. On the other hand, the technique is still valid as a passivation method if the photodetector pixel is isolated by etching only the top contact layer.
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Authors and Affiliations

Osvaldo M. Braga
1
Cristian A. Delfino
1
Rudy M. S. Kawabata
2
Luciana D. Pinto
2
Gustavo S. Vieira
1
Maurício P. Pires
3
Patricia L. Souza
2
Euclydes Marega
4
John A. Carlin
5
Sanjay Krishna
5
  1. Institute for Advanced Studies, IEAV, 12228-001, São Paulo, Brazil
  2. LabSem, CETUC, Pontifícia Universidade Católica, PUC-Rio, R. Marquês de São Vicente 124, Gávea, 22451-900 Rio de Janeiro, Brazil
  3. Physics Institute, Federal University of Rio de Janeiro, Av. Athos da Silveira Ramos 149, 21941-909 Rio de Janeiro, Brazil
  4. Universidade de São Paulo, USP-São Carlos, 13566-560 São Carlos, SP, Brazil
  5. Ohio State University, 281 W Lane Ave., Columbus, OH 43210, USA

Morphology of an ITO recombination layer deposited on a silicon wire texture for potential silicon/perovskite tandem solar cell applications

Grażyna Kulesza-Matlak Marek Szindler Magdalena M. Szindler Anna Sypień Łukasz Major Kazimierz Drabczyk
Opto-Electronics Review | 2023 | 31 | 4 | e148222 | DOI: 10.24425/opelre.2023.148222
Keywords tandem solar cell silicon nanowires MAE etching; ITO recombination layer
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Abstract

This paper presents research on the deposition of an indium tin oxide (ITO) layer which may act as a recombination layer in a silicon/perovskite tandem solar cell. ITO was deposited by magnetron sputtering on a highly porous surface of silicon etched by the metal-assisted etching method (MAE) for texturing as nano and microwires. The homogeneity of the ITO layer and the degree of coverage of the silicon wires were assessed using electron microscopy imaging techniques. The quality of the deposited layer was specified, and problems related to both the presence of a porous substrate and the deposition method were determined. The presence of a characteristic structure of the deposited ITO layer resembling a "match" in shape was demonstrated. Due to the specificity of the porous layer of silicon wires, the ITO layer should not exceed 80 nm. Additionally, to avoid differences in ITO thickness at the top and base of the silicon wire, the layer should be no thicker than 40 nm for the given deposition parameters.
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Authors and Affiliations

Grażyna Kulesza-Matlak
1
ORCID: ORCID
Marek Szindler
2
ORCID: ORCID
Magdalena M. Szindler
2
ORCID: ORCID
Anna Sypień
1
ORCID: ORCID
Łukasz Major
1
ORCID: ORCID
Kazimierz Drabczyk
1
ORCID: ORCID
  1. Institute of Metallurgy and Materials Science, Polish Academy of Sciences, ul. W. Reymonta 25, 30-059 Kraków, Poland
  2. Faculty of Mechanical Engineering, Silesian University of Technology, ul. Akademicka 2A, 44-100 Gliwice, Poland

Molecular cloning of the OMP19 gene from Brucella melitensis strain H38 and its antigenicity compared to that of commercial OMP19

A. Uslu G. Sanioglu Golen M. Agah Tekindal A. Sakmanoglu Z. Sayın O. Denizli A. Gok O. Erganis
Polish Journal of Veterinary Sciences | 2022 | vol. 25 | No 4 | 561-569
Keywords rOMP19 antigen Brucella melitensis recombinant protein
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Abstract

Brucellosis is a worldwide zoonosis, that can still be classified as endemic despite its ancient origins which causes economic losses and public health problems. Although effectively controlled by vaccination in animals, there is currently no vaccine for use in humans. Outer Membrane Proteins (OMP) that play an active immunogenic and protective role in the Brucellae family. OMP19 is present in all Brucella species as a surface antigen and is a potent immunogen responsible for Brucellosis intracellular infection. For this reason, the study was aimed to be used safely as a potential recombinant vaccine candidate against all Brucella infections, especially in humans and pregnant animals. This study evaluated a Brucella lipoprotein antigen, i.e. 19 kilodalton (kDa) outer membrane protein (OMP19), which was amplified and cloned into the pETSUMO vector system. The immunogenic power of the purified recombinant OMP19 antigen against brucellosis was compared with that of OMP19 (Raybiotech Inc, USA) in a mouse model and the obtained rOMP19 antigen was found to be similar to the commercially available recombinant protein.
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Authors and Affiliations

A. Uslu
1
G. Sanioglu Golen
2
M. Agah Tekindal
3
A. Sakmanoglu
1
Z. Sayın
1
O. Denizli
1
A. Gok
1
O. Erganis
1
  1. Selcuk University, Faculty of Veterinary Medicine, Microbiology Department, Alaeddin Keykubat Campus, Selcuklu, Konya, 42130, Turkey
  2. Aksaray University, Faculty of Veterinary Medicine, Microbiology Department, Aksaray, 68100, Turkey
  3. Izmir Katip Çelebi University, Faculty of Medicine, Biostatistics Department, Cigli Campus, Cigli, Izmir, 35620, Turkey

Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures

T. Piotrowski M. Węgrzecki M. Stolarski K. Gościński T. Krajewski
Opto-Electronics Review | 2015 | vol. 23 | No 4 | 265-270
Keywords effective minority diffusion length surface recombination velocity epiplanar detector p-n structures
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Abstract

One of the key parameters determining detection properties of silicon PIN detector structures (p+-ν-n+ or n+-ν-p+) is minority carrier diffusion length in p-n junction regions p-n (p+-ν or n+-ν). The parameter concerned strongly depends on quality of the starting material and technological processes conducted and has a significant impact on detector parameters, in particular dark current intensity. Thus, the parameter must be determined in order to optimise the design and technology of detectors.

The paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ1 = 500 nm (silicon penetration depth of around 0.9 μm) and λ2 = 900 nm (silicon penetration depth of around 33 μm). The value of diffusion length was determined by analysing the spatial distribution of optical carrier generation and values of photoelectric currents.

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Authors and Affiliations

T. Piotrowski
M. Węgrzecki
M. Stolarski
K. Gościński
T. Krajewski

Investigating the filling state of OSL detector traps with the optical sampling method

Ewa Mandowska Robert Smyka Arkadiusz Mandowski
Metrology and Measurement Systems | 2022 | vol. 29 | No 2 | 361-371 | DOI: 10.24425/mms.2022.140039
Keywords optically stimulated luminescence (OSL) ionizing radiation detectors radiative recombination signal loss
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Abstract

Optically stimulated luminescence (OSL) and thermoluminescence (TL) methods are commonly used in dosimetry of ionizing radiation and dating of archaeological and geological objects. A typical disadvantage of OSL detectors is signal loss over a longer time scale. In this article, we present a method of studying this phenomenon as well as monitoring the state of the detector by means of optical sampling. The method was used to determine the OSL signal loss (fading) characteristics of selected potassium feldspars.
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Authors and Affiliations

Ewa Mandowska
1
Robert Smyka
2
Arkadiusz Mandowski
2
  1. Jan Dlugosz University, Faculty of Science and Technology, Department of Advanced Calculation Methods, Armii Krajowej 13/15, 42-200, Czestochowa, Poland
  2. Jan Dlugosz University, Faculty of Science and Technology, Department of Experimental and Applied Physics, Armii Krajowej 13/15, 42-200, Czestochowa, Poland

Development of an indirect enzyme-linked immunosorbent assay for the detection of novel chicken orthoreovirus

H. Liu Z. Wei J. Yang Y. Wang J. Hu Y. Tang Y. Diao
Polish Journal of Veterinary Sciences | 2022 | vol. 25 | No 1 | 109-118 | DOI: 10.24425/pjvs.2022.140847
Keywords novel avian orthoreovirus σC gene recombinant plasmid indirect enzyme linked immunosorbent assay epidemiological investigation
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Abstract

A novel avian orthoreovirus (N-ARV) variant characterized with obvious arthritis and synovial inflammation, was isolated from Shandong, China in May 2016. It caused chicken poor growth and enormous economic losses to the poultry industry of China. However, there are few effective methods for detecting the antibody levels of N-ARV. In this study, a viral structural protein σC was expressed using the prokaryotic expression vector pET32a (+). The target protein was obtained by inducing for 6 hours at an IPTG concentration of 0.6mM. The optimal dilution of the coating antigen and serum antibody were determined to be 1000 fold and 10 fold respectively. A specificity test showed that there was no positive reactivity between N-ARV and other pathogens, and when the positive serum was diluted 100 times detection results were still checkable. The repeatability of this method was determined by the inter assay and intra assay tests with variability ranging from 4.85% to 7.93%. In conclusion, this indirect enzyme linked immunosorbent assay (ELISA) will be useful for large-scale serological surveys and monitoring antibody levels in N-ARV infection.
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Authors and Affiliations

H. Liu
1 2 3
ORCID: ORCID
Z. Wei
1 2 3
J. Yang
1 2 3
Y. Wang
1 2 3
ORCID: ORCID
J. Hu
1 2 3
Y. Tang
1 2 3
Y. Diao
1 2 3
  1. College of Veterinary Medicine, Shandong Agricultural University, No.61 Daizong Street, Tai’an 271018, China
  2. Shandong Provincial Key Laboratory of Animal Biotechnology and Disease Control and Prevention, Shandong Agricultural University, No.61 Daizong Street, Tai’an 271018, China
  3. Shandong Provincial Engineering Technology Research Center of Animal Disease Control and Prevention, Shandong Agricultural University, No.61 Daizong Street, Tai’an 271018, China

Production and characterization of swine hyperimmune serum against recombinant, common antigens of Gram-negative outer membrane bacteria

A. Rząsa O. Pietrasina M. Czerniecki J. Bajzert T. Stefaniak
Polish Journal of Veterinary Sciences | 2019 | vol.22 | No 1 | 117-125 | DOI: 10.24425/pjvs.2019.127078
Keywords swine recombinant outer membrane proteins antibody response hyperimmune serum subunit vaccine
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Abstract

The application of immune serum is one of the most efficient method used formerly in the protection of raised piglets’/weaners’ health . The objective of the study was to determine specific antibody response during hyperimmunization of fatteners with a self-prepared subunit vaccine, and to propose production method of immune serum against Gram-negative bacteria antigens. The vaccine was administered every two weeks, 4 times. Individual and pooled serum samples were assayed for IgM, IgG and IgA antibodies against Histophilus somni recombinant Hsp60, H.somni rOMP40 and Pasteurella multocida LPS. Additionally total serum IgG and haptoglobin concentrations were measured.

Two weeks after the first vaccination IgM antibody raised significantly against H.s. rOMP40 and LPS, whereas after 4 weeks it increased against rHsp60 antigens. Anti-LPS IgM antibody raised up stepwise till the end of the observation, but IgM antibody against H.s. rHsp60 and H.s. rOMP40 decreased in further samplings. A significant raise in IgG class H.s. rHsp60-

-antibody was found 4 weeks after the first immunization and a similar raise against two remain- ing antigens after 6 weeks. The intensity of the reaction increased till the end of the experiment. The raise in IgA antibody level was observed only for H.s. rHsp60 antigen. Clinically observed, proper animal health and welfare were confirmed by haptoglobin concentration, which remained in physiological range. At least 4 booster doses were necessary to obtain hyperimmune serum containing a high level of antibodies against examined antigens. The number of immunizations influenced response profiles for specific IgM, IgG, IgA antibodies.

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Authors and Affiliations

A. Rząsa
O. Pietrasina
M. Czerniecki
J. Bajzert
T. Stefaniak

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