Scanning probe microscopy (SPM) since its invention in the 80’s became very popular in examination of many different sample parameters, both in university and industry. This was the effect of bringing this technology closer to the operator. Although the ease of use opened a possibility for measurements without high labour requirement, a quantitative analysis is still a limitation in Scanning ProbeMicroscopes available on the market. Based on experience of Nano-metrology Group, SPM still can be considered as a tool for quantitative examination of thermal, electrical and mechanical surface parameters. In this work we present an ARMScope platform as a versatile SPM controller that is proved to be useful in a variety of applications: fromatomic-resolution STM (Scanning TunnellingMicroscopy) toMulti-resonance KPFM (Kelvin Probe force microscopy) to commercial SEMs (Scanning electron microscopes).

Tungsten diselenide (WSe2) is one of the promising transition metal dichalcogenides (TMDs) for nanoelectronics and optoelectronics. To enhance and tune the electronic performance of TMDs, chemical functionalization via covalent and van der Waals approaches has been suggested. In the present report, the electric and structural transition of WSe2 oxidized by exposure to O3 is investigated using scanning tunneling microscopy. It is demonstrated that the exposure of WSe2/high-ordered pyrolytic graphite sample to O3 induces the formation of molecular adsorbates on the surface, which enables to increase in the density of states near the valence band edge, resulting from electric structural modification of domain boundaries via exposure of atomic O. According to the work function extracted by Kelvin probe force microscopy, monolayer WSe2 with the O3 exposure results in a gradual increase in work function as the exposure to O3. Therefore, the present report demonstrates the potential pathway for the chemical functionalization of TMDs to enhance the electric performance of TMDs devices.