Thermo-optic properties enhancement of the bi-stable temperature threshold sensors based on a partially filled photonic crystal fiber was reported. Previously tested transducers filled with a selected group of pure n-alkanes had in most cases differences between switching ON and OFF states. Therefore, the modification of filling material by using additional crystallization centers in the form of gold nanoparticles was applied to minimize this undesirable effect. The evaluation of the thermodynamic properties of pentadecane and its mixtures with 14 nm spherical Au nanoparticles based on the differential scanning calorimetry measurements was presented. Optical properties analysis of sensors prepared with these mixtures has shown that they are bounded with refractive index changes of the filling material. Particular sensor switches ON before melting process begins and switches OFF before crystallization starts. Admixing next group of n-alkanes with these nanoparticles allows to design six sensors transducers which change ON and OFF states at the same temperature. Thus, the transducers with a wider temperature range for fiber-optic multi-threshold temperature sensor tests will be used.
The paper presents a dual-band plasmonic solar cell. The proposed unit structure gathers two layers, each layer consists of a silver nanoparticle deposited on a GaAs substrate and covered with an ITO layer, It reveals two discrete absorption bands in the infra-red part of the solar spectrum. Nanoparticle structures have been used for light-trapping to increase the absorption of plasmonic solar cells. By proper engineering of these structures, resonance frequencies and absorption coefficients can be controlled as it will be elucidated. The simulation results are achieved using CST Microwave Studio through the finite element method. The results indicate that this proposed dual-band plasmonic solar cell exhibits an absorption bandwidth, defined as the full width at half maximum, reaches 71 nm. Moreover, It can be noticed that by controlling the nanoparticle height above the GaAs substrate, the absorption peak can be increased to reach 0.77.
The paper presents a comprehensive look at the perspectives on the use of THz in digital communication systems. The publication aims to focus on arguments that justify a significant increase in the frequency of radio links and their integration with fibre-based networks. Comparison of THz links with their microwave and optical counterparts is discussed from basic physical limitations to technological constraints. Main attention is paid to the available channel capacity resulting from its bandwidth and signal-to-noise ratio. The short final discussion is about technology platforms that seem to be crucial to the availability of suitable THz sources. According to the author, the biggest advantage of using bands in the range of several hundred GHz for a digital data transmission is their use for mobile communication over short distances, as well as for broadband indoor links. However, these applications require a development of compact electronic THz sources with low noise and power reaching single watts. This is beyond the range of the most popular silicon-based technology platform, although a significant progress can be expected with the development of technologies based on wide bandgap semiconductors. Fibre optic connections remain the unquestioned leader in communication over long distances and permanent links.
In this paper, we present the electrical and electro-optical characterizations of an InAs/GaSb type-2 superlattice barrier photodetector operating in the full longwave infrared spectral domain. The fabricated detectors exhibited a 50% cut-off wavelength around 14 μm at 80 K and a quantum efficiency slightly above 20%. The dark current density was of 4.6 × 10 2 A/cm2 at 80 K and a minority carrier lateral diffusion was evaluated through dark current measurements on different detector sizes. In addition, detector spectral response, its dark current-voltage characteristics and capacitance-voltage curve accompanied by electric field simulations were analyzed in order to determine the operating bias and the dark current regimes at different biases. Finally, dark current simulations were also performed to estimate a minority carrier lifetime by comparing experimental curves with simulated ones.
Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors.
Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data.
At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573–873 K. Photoluminescence was carried out in the temperature range of 20–300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.
In this article, synthesis, electronic and optical properties of an N-cyclohexyl-acrylamide (NCA) molecule are described based on different solvent environments and supported by theoretical calculations. Theoretical calculations have been carried out using a density function theory (DFT). Temperature dependence of the sample electrical resistance has been obtained by a four-point probe technique. Experimental and semi-theoretical parameters such as optical density, transmittance, optical band gap, refractive index of the NCA for different solvents were obtained. Both optical values and electrical resistance values have shown that NCA is a semiconductor material. The values of HOMO and LUMO energy levels of the headline molecule indicate that it can be used as the electron transfer material in OLEDs. All results obtained confirm that the NCA is a candidate molecule for OLED and optoelectronic applications.
The paper describes a research on assessing the quality of edges resulting from the interaction of laser pulses with a material of rigid and flexible printed circuits. A modern Nd:YVO4 crystal diode-pumped solid-state laser generating a 532 nm wavelength radiation with a nanosecond pulse time was used for the research. Influence of laser parameters such as beam power and pulse repetition frequency on a heat affected zone and carbonization was investigated. Quality and morphology of laser-cut substrates were analyzed by optical microscopy. High quality laser cutting of printed circuit board substrates was obtained without delamination and surface damage, with a minimal carbonization and heat affected zone. The developed process was implemented on the printed circuit assembly line.
The presented work proposes a new dimming control schemes for indoor visible light communication which combines variable pulse-position modulation, colour shift keying as key schemes of IEEE 802.15.7 standard, and sub carrier-pulse-position modulation as a pulse-position modulation variant with orthogonal frequency division multiplexing. These schemes are then compared with traditional merging schemes utilizing pulse-width modulation and multiple pulse-position modulation with m-ary quadrature amplitude modulation OFDM. The proposed schemes are investigated in a typical room with a different lighting layout (i.e., distinctive and uniform lighting layout), followed by an illumination investigation to evaluate the performance of the proposed schemes, especially the enhanced achieved data rates, and to determine their limitations as reliable visible light communication systems that can satisfy both communication and illumination requirements.
In the paper, an effective way to design asymmetrical optics for a uniform vertical surface illumination was presented. Assessment of the obtained distribution of luminance (illuminance) on the illuminated surface is done almost at the same time as designing the optical system elements. Advantage of the final application of the presented method in 3D will be independence from the implementation of time-consuming simulations in order to verify the already designed optics. Understanding the method and its application is simple and intuitive. Observing the luminance distribution, created on the illuminated surface almost at the same time as its design, allows to see the effect of adding the next elements of the optical system on this distribution.
In this work, we present an extensive investigation of the effect of Al2O3 decoration on the morphological, structural and opto-electronic properties of a porous Si (Sip)/Cr2O3 composite. The Sip layers were prepared by the anodization method. Al2O3 and Cr2O3 thin films were deposited by physical vapour deposition. The morphological and micro-structural properties of Sip/Cr2O3/Al2O3 were studied using the scanning electron microscope, energy dispersive X-ray spectroscopy and X-ray diffraction techniques. It was found that Al2O3 decoration with different concentration strongly affects the Sip/Cr2O3 microstructure mainly at the level of porosity. Variable angle spectroscopic ellipsometry demonstrates a strong correlation between optical constants (n and k) of Sip/Cr2O3/Al2O3 and microstructure properties. Dielectric properties of Sip/Cr2O3/Al2O3 such as electrical conductivity and conduction mechanism were explored using impedance spectroscopy over the temperature interval ranging from 340 to 410°C. A semiconductor to the metallic transition has been observed at high frequency.