@ARTICLE{Pokryszka_Piotr_In-situ_2025,
 author={Pokryszka, Piotr and Kijaszek, Wojciech and Patela, Sergiusz and Stafiniak, Andrzej and Wosko, Mateusz and Paszkiewicz, Regina},
 volume={vol. 32},
 number={No 1},
 journal={Metrology and Measurement Systems},
 pages={1–12},
 howpublished={online},
 year={2025},
 publisher={Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation},
 abstract={This paper presents a measurement system for in-situ characterization of semiconductor structures fabricated by the Metalorganic Chemical Vapor Deposition (MOVPE) method using Reflectance Spectroscopy (RS). The construction of the developed measurement set-up is presented, along with a description of individual functional blocks. As part of the experiment, the parameters of the deposited gallium nitride (GaN) layer such as thickness (d), roughness (REMA), optical energy bandgap (Egopt) were monitored in-situ, and the complex refractive index (n + ik) of GaN was determined at temperatures above 1000°C. The Effective Medium Approximation (EMA) method was employed to characterize the surface roughness of the layer during the growth process. Based on this data, the exact moment of full coalescence and subsequent growth in two dimensions was determined.},
 type={Article},
 title={In-situ characterization of GaN material using Reflectance Spectroscopy},
 URL={http://journals.pan.pl/Content/134765/12_2k.pdf},
 doi={10.24425/mms.2025.152780},
 keywords={AIIIN, MOVPE, in-situ measurements, reflectance spectroscopy, optical properties},
}