@ARTICLE{Bisewski_Damian_Examinations_2016, author={Bisewski, Damian and Myśliwiec, Marcin and Górecki, Krzysztof and Kisiel, Ryszard and Zarębski, Janusz}, volume={vol. 23}, number={No 3}, journal={Metrology and Measurement Systems}, pages={451-459}, howpublished={online}, year={2016}, publisher={Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation}, abstract={This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.}, type={Artykuły / Articles}, title={Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes}, URL={http://journals.pan.pl/Content/106339/PDF/10.15.15mms-2016-0033%20paper%2012.pdf}, doi={10.1515/mms-2016-0033}, keywords={Schottky diodes, transient thermal impedance, thermal measurements, Silicon carbide, packaging}, }