@ARTICLE{Ben_Afkir_N._Control_2019,
 author={Ben Afkir, N. and Feddi, E. and Meziane, J. and EL Kouari, Y. and Zazoui, M. and Migalska-Zalas, A.},
 volume={vol. 27},
 number={No 1},
 journal={Opto-Electronics Review},
 pages={25-31},
 howpublished={online},
 year={2019},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={The impact ionization in semiconductor materials is a process that produces multiple charge carrier pairs from a single excitation. This mechanism constitutes a possible road to increase the efficiency of the p-n and p-i-n solar cells junctions. Our study considers the structure of InN/InGaN quantum dot solar cell in the calculation. In this work, we study the effect of indium concentration and temperature on the coefficient of the material type parameter of the impact ionization process for a p(InGaN)-n(InGaN) and p(InGaN)- i(QDs-InN)-n(InGaN) solar cell. Next, we investigate the effect of perturbation such as temperature and indium composition on conventional solar cell’s (p(InGaN)-n(InGaN)) and solar cells of the third generation with quantum dot intermediate band IBSC (p(InGaN-i(QD-InN)-n(InGaN)) by analyzing their behaviour in terms of efficiency of energy conversion at the presence of the impact ionization process. Our numerical results show that the efficiency is strongly influenced by all of these parameters. It is also demonstrated that decreased with the increase of indium concentration and temperature which contributes to an overall improvement of the conversion efficiency.},
 type={Article},
 title={Control of simultaneous effects of the temperature, indium composition and the impact ionization process on the performance of thequantum dot solar cells},
 URL={http://journals.pan.pl/Content/115234/PDF/opelre_2019_27_1_25-31.pdf},
 keywords={Impact ionization, InGaN, IBSC, Quantum dot, Solar cells, Energy},
}