@ARTICLE{Zdyb_A._The_2018, author={Zdyb, A. and Krawczak, E. and Gułkowski, S.}, volume={vol. 26}, number={No 3}, journal={Opto-Electronics Review}, pages={247-251}, howpublished={online}, year={2018}, publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology}, abstract={Al doped ZnO has been explored as a viable alternative to indium thin oxide, which is usually used as transparent electrodes' coverage but is expensive. Homogenous and durable ZnO:Al layers on glass have been obtained in radio frequency magnetron sputtering system by adjusting optimized deposition parameters, using ZnO ceramic target with 2 wt% Al2O3. Then, after growth process, annealing treatment has been introduced in order to improve the quality of the layers. Structural, electrical and optical properties of the obtained ZnO:Al layers are presented and discussed. From the application point of view, the best results (sheet resistance of 24 Ω/sq and transparency well above 85%) were achieved after annealing in 300°C.}, type={Article}, title={The influence of annealing on the properties of ZnO:Al layers obtained by RF magnetron sputtering}, URL={http://journals.pan.pl/Content/115322/PDF/main.pdf}, keywords={ZnO:Al, RF magnetron sputtering, Transparent conductive oxide (TCO), Transparent electrodes}, }