@ARTICLE{Semkiv_Ihor_Ag8SnSe6_2017,
 author={Semkiv, Ihor and Ilchuk, Hryhoriy and Pawlowski, Marek and Kusnezh, Viktor},
 volume={vol. 25},
 number={No 1},
 journal={Opto-Electronics Review},
 pages={37-40},
 howpublished={online},
 year={2017},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={The Ag8SnSe6 argyrodite compound was synthesized by the direct melting of the elementary Ag, Sn and Se high purity grade stoichiometric mixture in a sealed silica ampoule. The prepared polycrystalline material was characterized by the X-ray diffraction (XRD), visible (VIS) and near-infrared (NIR) reflection and photoluminescence (PL) spectroscopy. XRD showed that the Ag8SnSe6 crystallizes in orthorhombic structure, Pmn21 space group with lattice parameters: а = 7.89052(6) Å, b = 7.78976(6) Å, c = 11.02717(8) Å. Photoluminescence spectra of the Ag8SnSe6 polycrystalline wafer show two bands at 1675 nm and 1460 nm. Absorption edge position estimated from optical reflectance spectra is located in the 1413–1540 nm wavelength range.},
 type={Article},
 title={Ag8SnSe6 argyrodite synthesis and optical properties},
 URL={http://journals.pan.pl/Content/115343/PDF/main.pdf},
 keywords={Argyrodite, Semiconductors, X-ray diffraction, Optical spectroscopy, Luminescence},
}