@ARTICLE{Szerling_A._High_2017,
 author={Szerling, A. and Slivken, S. and Razeghi, M.},
 volume={vol. 25},
 number={No 3},
 journal={Opto-Electronics Review},
 pages={205-208},
 howpublished={online},
 year={2017},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={In this paper ∼16 μm-emitting multimode InP-related quantum cascade lasers are presented with the maximum operating temperature 373 K, peak and average optical power equal to 720 mW and 4.8 mW at 303 K, respectively, and the characteristic temperature (T0) 272 K. Two types of the lasers were fabricated and characterized: the lasers with a SiO2 layer left untouched in the area of the metal-free window on top of the ridge, and the lasers with the SiO2 layer removed from the metal-free window area. Dual-wavelength operation was obtained, at λ ∼ 15.6 μm (641 cm−1) and at λ ∼ 16.6 μm (602 cm−1) for lasers with SiO2 removed, while within the emission spectrum of the lasers with SiO2 left untouched only the former lasing peak was present. The parameters of these devices like threshold current, optical power and emission wavelength are compared. Lasers without the SiO2 layer showed ∼15% lower threshold current than these ones with the SiO2 layer. The optical powers for lasers without SiO2 layer were almost twice higher than for the lasers with the SiO2 layer on the top of the ridge.},
 type={Article},
 title={High peak power 16 μm InP-related quantum cascade laser},
 URL={http://journals.pan.pl/Content/115368/PDF/main.pdf},
 keywords={Quantum cascade lasers, SiO2 layer, InP},
}