@ARTICLE{Smaani_Billel_Double-gate_2021,
 author={Smaani, Billel and Meraihi, Yacin and Nafa, Fares and Benlatreche, Mohamed Salah and Akroum, Hamza and Latreche, Saida},
 volume={vol. 67},
 number={No 4},
 journal={International Journal of Electronics and Telecommunications},
 pages={609-614},
 howpublished={online},
 year={2021},
 publisher={Polish Academy of Sciences Committee of Electronics and Telecommunications},
 abstract={This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog- AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model is inserted in SMASH circuit simulator for the transient simulation and the configuration of the Colpitts oscillator, the common-source amplifier, and the inverter. The proposed model has the advantages of being simple and compact. It was validated using TCAD simulation results of the same transistor realized with Silvaco Software.},
 type={Article},
 title={Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits},
 URL={http://journals.pan.pl/Content/121895/PDF-MASTER/84_3274-Billel_skl.pdf},
 doi={10.24425/ijet.2021.137853},
 keywords={double-gate MOSFET, compact model, ultra lowpower analog circuits},
}