@ARTICLE{Rogalski_Antoni_Van_2022,
 author={Rogalski, Antoni},
 volume={30},
 number={1},
 journal={Opto-Electronics Review},
 pages={e140551},
 howpublished={online},
 year={2022},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={In the last decade several papers have announced usefulness of two-dimensional materials for high operating temperature photodetectors covering long wavelength infrared spectral region. Transition metal dichalcogenide photodetectors, such as PdSe 2/MoS 2 and WS 2/HfS 2 and WS 2/HfS 2 heterojunctions, have been shown to achieve record detectivities at room temperature (higher than HgCdTe photodiodes). Under these circumstances, it is reasonable to consider the advantages and disadvantages of two-dimensional materials for infrared detection. This review attempts to answer the question thus posed.},
 type={Reviews},
 title={Van der Waals materials for HOT infrared detectors: A review},
 URL={http://journals.pan.pl/Content/122616/PDF/OPELRE_2022_30_1_A_Rogalski_corr.pdf},
 doi={10.24425/opelre.2022.140551},
 keywords={2D material photodetectors, transition metal dichalcogenides photodetectors, HgCdTe photodiodes, high operating temperature infrared detectors},
}