@ARTICLE{Delmas_Marie_High_2023,
 author={Delmas, Marie and Ramos, David and Ivanov, Ruslan and Žurauskaitė, Laura and Evans, Dean and Rihtnesberg, David and Almqvist, Susanne and Becanovic, Smilja and Costard, Eric and Höglund, Linda},
 volume={31},
 number={special issue},
 journal={Opto-Electronics Review},
 pages={e144555},
 howpublished={online},
 year={2023},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={This work investigates the potential of InAs/GaSb superlattice detectors for the short-wavelength infrared spectral band. A barrier detector structure was grown by molecular beam epitaxy and devices were fabricated using standard photolithography techniques. Optical and electrical characterisations were carried out and the current limitations were identified. The authors found that the short diffusion length of ~1.8 µm is currently limiting the quantum efficiency (double-pass, no anti-reflection coating) to 43% at 2.8 µm and 200 K. The dark current density is limited by the surface leakage current which shows generation-recombination and diffusion characters below and above 195 K, respectively. By fitting the size dependence of the dark current, the bulk values have been estimated to be 6.57·10−6 A/cm2 at 200 K and 2.31·10−6 A/cm2 at 250 K, which is only a factor of 4 and 2, respectively, above the Rule07.},
 type={Article},
 title={High performance type-II InAs/GaSb superlattice infrared photodetectors with a short cut-off wavelength},
 URL={http://journals.pan.pl/Content/126139/PDF/OPELRE_2023_71_Special_Issue_M_Delmas.pdf},
 doi={10.24425/opelre.2023.144555},
 keywords={infrared detectors, short-wavelength infrared, InAs/GaSb superlattice, type-II superlattice},
}