@ARTICLE{Lee_Hyun-Jin_Design_2023,
 author={Lee, Hyun-Jin and Eom, Jun Ho and Jung, Hyun Chul and Kang, Ko-Ku and Ryu, Seong Min and Jang, Ahreum and Kim, Jong Gi and Kim, Young Ho and Jung, Han and Kim, Sun Ho and Choi, Jong Hwa},
 volume={31},
 number={special issue},
 journal={Opto-Electronics Review},
 pages={e144560},
 howpublished={online},
 year={2023},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={Dual-band infrared detector, which acquires more image information than single-band detectors, has excellent detection, recognition, and identification capabilities. The dual-band detector can have two bumps to connect with each absorber layer, but it is difficult to implement small pitch focal plane arrays and its fabrication process is complicated. Therefore, the most effective way for a dual-band detector is to acquire each band by bias-selectable with one bump. To aim this, a dual-band MWIR/LWIR detector based on an InAs/GaSb type-II superlattice nBn structure was designed and its performance was evaluated in this work. Since two absorber layers were separated by the barrier layer, each band can be detected by bias-selectable with one bump. The fabricated dual-band device exhibited the dark current and spectral response characteristics of MWIR and LWIR bands under negative and positive bias, respectively. Spectral crosstalk that is a major issue in dual-band detectors was also improved. Finally, a 20 μm pitch 640 × 512 dual-band detector was fabricated, and both MWIR and LWIR images exhibited an average noise equivalent temperature difference of 30 mK or less at 80 K.},
 type={Article},
 title={Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure},
 URL={http://journals.pan.pl/Content/126143/PDF/OPELRE_2023_71_Special_Issue_H_J_Lee.pdf},
 doi={10.24425/opelre.2023.144560},
 keywords={InAs/GaSb type-II superlattice, dual-band detector, dark current, spectral quantum efficiency, noise equivalent temperature difference},
}