@ARTICLE{Ting_David_Z._InAs/InAsSb_2023,
 author={Ting, David Z. and Soibel, Alexander and Khoshakhlagh, Arezou and Keo, Sam A. and Rafol, Sir B. and Fisher, Anita M. and Hill, Cory J. and Pepper, Brian J. and Maruyama, Yuki and Gunapala, Sarath D.},
 volume={31},
 number={special issue},
 journal={Opto-Electronics Review},
 pages={e144565},
 howpublished={online},
 year={2023},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type-II strained layer superlattice absorbers have achieved excellent performance. In the long and very long wavelength infrared, however, n-type InAs/InAsSb type-II strained layer superlattice detectors are limited by their relatively small absorption coefficients and short growth-direction hole diffusion lengths, and consequently have only been able to achieve modest level of quantum efficiency. The authors present an overview of their progress in exploring complementary barrier infrared detectors that contain p-type InAs/InAsSb type-II strained layer superlattice absorbers for quantum efficiency enhancement. The authors describe some representative results, and also provide additional references for more in-depth discussions. Results on InAs/InAsSb type-II strained layer superlattice focal plane arrays for potential NASA applications are also briefly discussed.},
 type={Article},
 title={InAs/InAsSb superlattice infrared detectors},
 URL={http://journals.pan.pl/Content/126147/PDF-MASTER/OPELRE_2023_71_Special_Issue_D_Z_Ting.pdf},
 doi={10.24425/opelre.2023.144565},
 keywords={infrared detector, type-II superlattice, InAs/InAsSb, complementary barrier infrared detectors, strained layer superlattice},
}