@ARTICLE{Bataillon_Clara_Dark_2023,
 author={Bataillon, Clara and Perez, Jean-Phillipe and Alchaar, Rodolphe and Michez, Alain and Gilard, Olivier and Saint-Pé, Olivier and Christol, Philippe},
 volume={31},
 number={special issue},
 journal={Opto-Electronics Review},
 pages={e144552},
 howpublished={online},
 year={2023},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={In this work, the authors investigated the influence of proton-irradiation on the dark current of XBp longwave infrared InAs/GaSb type-II superlattice barrier detectors, showing a cut-off wavelength from 11 µm to 13 µm at 80 K. The proton irradiations were performed with 63 MeV protons and fluences up to 8∙1011 H+/cm² on a type-II superlattice detector kept at cryogenic (100 K) or room temperature (300 K). The irradiation temperature of the detector is a key parameter influencing the effects of proton irradiation. The dark current density increases due to displacement damage dose effects and this increase is more important when the detector is proton-irradiated at room temperature rather than at cryogenic temperature.},
 type={Article},
 title={Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation},
 URL={http://journals.pan.pl/Content/126153/PDF/OPELRE_2023_71_Special_Issue_C_Bataillon.pdf},
 doi={10.24425/opelre.2023.144552},
 keywords={displacement damage dose, proton radiation, total ionizing dose, type-II superlattice photodetector},
}