@ARTICLE{Ramos_David_Two-step_2023,
 author={Ramos, David and Delmas, Marie and Ivanov, Ruslan and Žurauskaitė, Laura and Evans, Dean and Almqvist, Susanne and Becanovic, Smilja and Hellström, Per-Erik and Costard, Eric and Höglund, Linda},
 volume={31},
 number={special issue},
 journal={Opto-Electronics Review},
 pages={e144556},
 howpublished={online},
 year={2023},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallow-etch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 µm with n-on-p polarity. A lateral diffusion length of 16 µm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 µm pitch, and a potential operating temperature up to 100 K is demonstrated.},
 type={Article},
 title={Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors},
 URL={http://journals.pan.pl/Content/126154/PDF/OPELRE_2023_71_Special_Issue_D_Ramos.pdf},
 doi={10.24425/opelre.2023.144556},
 keywords={infrared detector, surface leakage, type-II superlattice, megapixel; n-on-p},
}