@ARTICLE{Majkowycz_Kinga_The_2024,
 author={Majkowycz, Kinga and Kopytko, Małgorzata and Murawski, Krzysztof and Martyniuk, Piotr},
 volume={32},
 number={1},
 journal={Opto-Electronics Review},
 pages={e149182},
 howpublished={online},
 year={2024},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={A method for defects extraction for a mercury cadmium telluride (MCT) multilayer low-bandgap heterostructure is presented. The N+/T/p/T/P+/n+ epitaxial layer was deposited on a GaAs substrate by a metal-organic chemical vapour deposition (MOCVD). The absorber was optimized for a cut-off wavelength of λc = 6 μm at 230 K. Deep-level transient spectroscopy (DLTS) measurements were conducted for the isolated junctions of the N+/T/p/T/P+/n+ heterostructure. Three localised point defects were extracted within the p-type active layer. Two of them were identified as electron traps and one as a hole trap, respectively.},
 type={Article},
 title={The method for extracting defect levels in the MCT multilayer low-bandgap heterostructures},
 URL={http://journals.pan.pl/Content/130225/PDF-MASTER/OPELRE_2024_32_1_K_Majkowycz.pdf},
 doi={10.24425/opelre.2024.149182},
 keywords={deep-level transient spectroscopy (DLTS), traps, MOCVD, MCT},
}