@ARTICLE{Różycka_Marta_The_2023,
 author={Różycka, Marta and Jasik, Agata and Kozłowski, Paweł and Bracha, Krzysztof and Ratajczak, Jacek and Wierzbicka-Miernik, Anna},
 volume={vol. 30},
 number={No 4},
 journal={Metrology and Measurement Systems},
 pages={809-819},
 howpublished={online},
 year={2023},
 publisher={Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation},
 abstract={The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that using a lower flow rate of 7 sccm results in obtaining a smoother sidewall morphology. Next, five periodic mesa-shaped structures were etched under identical conditions, but using a different time. The results indicated that the ICP-RIE method using a BCl3 flow rate of 7 sccm, ICP:RIE power ratio of 300W:270W allowed the ICP:RIE formation of a periodic mesa-shaped structure with smooth and perpendicular sidewalls.},
 type={Article},
 title={The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays},
 URL={http://journals.pan.pl/Content/130315/art13_int.pdf},
 doi={10.24425/mms.2023.147955},
 keywords={ICP-RIE, dry etching, type II InAs/GaSb superlattice, BCl3},
}