TY - JOUR N2 - This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes. L1 - http://journals.pan.pl/Content/106339/PDF/10.15.15mms-2016-0033%20paper%2012.pdf L2 - http://journals.pan.pl/Content/106339 PY - 2016 IS - No 3 EP - 459 DO - 10.1515/mms-2016-0033 KW - Schottky diodes KW - transient thermal impedance KW - thermal measurements KW - Silicon carbide KW - packaging A1 - Bisewski, Damian A1 - Myśliwiec, Marcin A1 - Górecki, Krzysztof A1 - Kisiel, Ryszard A1 - Zarębski, Janusz PB - Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation VL - vol. 23 DA - 2016.09.30 T1 - Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes SP - 451 UR - http://journals.pan.pl/dlibra/publication/edition/106339 T2 - Metrology and Measurement Systems ER -