TY - JOUR N2 - In this paper, detailed theoretical investigation on the frequency response and responsivity of a strain balanced SiGeSn/GeSn quantum well infrared photodetector (QWIP) is made. Rate equation and continuity equation in the well are solved simultaneously to obtain photo generated current. Quantum mechanical carrier transport like carrier capture in QW, escape of carrier from the well due to thermionic emission and tunneling are considered in this calculation. Impact of Sn composition in the GeSn well on the frequency response, bandwidth and responsivity are studied. Results show that Sn concentration in the GeSn active layer and applied bias have important role on the performance of the device. Significant bandwidth is obtained at low reverse bias voltage, e.g., 200 GHz is obtained at 0.28 V bias for a single Ge0.83Sn0.17 layer. Whereas, the maximum responsivity is of 8.6 mA/W at 0.5 V bias for the same structure. However, this can be enhanced by using MQW structure. L1 - http://journals.pan.pl/Content/115305/PDF/main.pdf L2 - http://journals.pan.pl/Content/115305 PY - 2018 IS - No 2 EP - 157 KW - GeSn KW - QWIP KW - Strain balanced KW - Sn composition KW - Bandwidth KW - Responsivity A1 - Pareek, P. A1 - Das, M.K. A1 - Kumar, S. PB - Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology VL - vol. 26 DA - 02.05.2018 T1 - Numerical analysis of SiGeSn/GeSn interband quantum well infrared photodetector SP - 149 UR - http://journals.pan.pl/dlibra/publication/edition/115305 T2 - Opto-Electronics Review ER -