TY - JOUR N2 - The Ag8SnSe6 argyrodite compound was synthesized by the direct melting of the elementary Ag, Sn and Se high purity grade stoichiometric mixture in a sealed silica ampoule. The prepared polycrystalline material was characterized by the X-ray diffraction (XRD), visible (VIS) and near-infrared (NIR) reflection and photoluminescence (PL) spectroscopy. XRD showed that the Ag8SnSe6 crystallizes in orthorhombic structure, Pmn21 space group with lattice parameters: а = 7.89052(6) Å, b = 7.78976(6) Å, c = 11.02717(8) Å. Photoluminescence spectra of the Ag8SnSe6 polycrystalline wafer show two bands at 1675 nm and 1460 nm. Absorption edge position estimated from optical reflectance spectra is located in the 1413–1540 nm wavelength range. L1 - http://journals.pan.pl/Content/115343/PDF/main.pdf L2 - http://journals.pan.pl/Content/115343 PY - 2017 IS - No 1 EP - 40 KW - Argyrodite KW - Semiconductors KW - X-ray diffraction KW - Optical spectroscopy KW - Luminescence A1 - Semkiv, Ihor A1 - Ilchuk, Hryhoriy A1 - Pawlowski, Marek A1 - Kusnezh, Viktor PB - Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology VL - vol. 25 DA - 12.04.2017 T1 - Ag8SnSe6 argyrodite synthesis and optical properties SP - 37 UR - http://journals.pan.pl/dlibra/publication/edition/115343 T2 - Opto-Electronics Review ER -