TY - JOUR N2 - Thin films of crystallized LaCoO3 were grown on Si substrate by Pulsed Laser Deposition at different temperatures (750°C, 850°C and 1000°C). The structural characterization of the LaCoO3 thin films was done by combining several techniques: Scanning Electron Microscopy (SEM), Atomic Force Microscope (AFM), Transmission Electron Microscopy (TEM) and Grazing Incidence X-Ray Diffraction (GIXRD). The thin films crystallized in the expected rhombohedral phase whatever the deposition temperature, with an increase of crystallite size from 70 nm at 750°C to 100 nm at 1000°C, and an average thickness of the thin films of less than 200 nm. At 850°C and 1000°C, the thin films are crack-free, and with a lower number of droplets than the film deposited at 750°C. The grains of LaCoO3 film deposited at 850°C are columnar, with a triangular termination. At 1000°C, an intermediate layer of La2Si2O7 was observed, indicating diffusion of Si into the deposited film. L1 - http://journals.pan.pl/Content/116059/PDF/AMM-2020-2-36-Jedrusik.pdf L2 - http://journals.pan.pl/Content/116059 PY - 2020 IS - No 2 EP - 797 DO - 10.24425/amm.2020.132822 KW - PLD KW - thin films KW - perovskites KW - LaCoO3 A1 - Jędrusik, M. A1 - Cieniek, Ł. A1 - Kopia, A. A1 - Turquat, Ch. A1 - Leroux, Ch. PB - Institute of Metallurgy and Materials Science of Polish Academy of Sciences PB - Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences VL - vol. 65 DA - 2020.05.08 T1 - Structural Characterization of LaCoO3 Thin Films Grown by Pulsed Laser Deposition SP - 793 UR - http://journals.pan.pl/dlibra/publication/edition/116059 T2 - Archives of Metallurgy and Materials ER -