TY - JOUR N2 - The performance of HgCdTe barrier detectors with cut-off wavelengths up to 3.6 μm fabricated using metaloorganic chemi- cal vapour deposition operated at high temperatures is presented. The detectors’ architecture consists of four layers: cap contact, wide bandgap barrier, absorber and bottom contact layer. The structures were fabricated both with n- and p-type absorbing layers. In the paper, different design of cap-barrier structural unit (n-Bp′, n+-Bp′, p+-Bp) were analysed in terms of various electrical and optical properties of the detectors, such as dark current, current responsivity time constant and detectivity. The devices with a p-type cap contact exhibit very low dark current densities in the range of (2÷3)×10-4 A/cm2 at 230 K and the maximum photoresponse of about 2 A/W in wide range of reverse bias voltage. The time constant of measured de- vices with n-type cap contact and p-type absorbing drops below 1 ns with reverse bias while the detectivity is at the level of 1010 cm ∙ Hz1/2/W. L1 - http://journals.pan.pl/Content/116134/PDF/opelre_2015_20.pdf L2 - http://journals.pan.pl/Content/116134 PY - 2015 IS - No 2 EP - 148 KW - HgCdTe KW - barrier infrared detector KW - high operating temperature KW - MOCVD A1 - Kopytko, Małgorzata A1 - Kębłowski, A. A1 - Gawron, W. A1 - Madejczyk, P. PB - Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology VL - vol. 23 DA - 07.04.2015 T1 - Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors SP - 143 UR - http://journals.pan.pl/dlibra/publication/edition/116134 T2 - Opto-Electronics Review ER -