TY - JOUR N2 - This paper reports on compact CMOS-based electronic sources and detectors developed for the terahertz frequency range. It was demonstrated that with the achievable noise-equivalent power levels in a few tens of pW\Hz 1/2 and the emitted power in the range of 100 μW, one can build effective quasi-optical emitter-detector pairs operating in the 200–266 GHz range with the input power-related signal-to-noise ratio reaching 70 dB for 1 Hz-equivalent noise bandwidth. The applicability of these compact devices for a variety of applications including imaging, spectroscopy or wireless communication links was also demonstrated. L1 - http://journals.pan.pl/Content/126923/PDF/OPELRE_2023_31_2_D_B_But.pdf L2 - http://journals.pan.pl/Content/126923 PY - 2023 IS - 2 EP - e144599 DO - 10.24425/opelre.2023.144599 KW - terahertz KW - teraFET KW - CMOS KW - THz emitter KW - THz detectors A1 - But, Dmytro B. A1 - Chernyadiev, Alexander V. A1 - Ikamas, Kęstutis A1 - Kołaciński, Cezary A1 - Krysl, Anastasiya A1 - Roskos, Hartmut G. A1 - Knap, Wojciech A1 - Lisauskas, Alvydas  PB - Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology VL - 31 DA - 18.04.2023 T1 - Compact terahertz devices based on silicon in CMOS and BiCMOS technologies SP - e144599 UR - http://journals.pan.pl/dlibra/publication/edition/126923 T2 - Opto-Electronics Review ER -