TY - JOUR N2 - In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations. L1 - http://journals.pan.pl/Content/90346/PDF/Journal10178-Volume%20XXII%20Issue3_12paper.pdf L2 - http://journals.pan.pl/Content/90346 PY - 2015 IS - No 3 EP - 464 DO - 10.1515/mms-2015-0036 KW - IGBT KW - thermal resistance KW - measurements KW - transistor KW - semiconductor devices A1 - Górecki, Krzysztof A1 - Górecki, Paweł PB - Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation VL - vol. 22 DA - 2015[2015.01.01 AD - 2015.12.31 AD] T1 - The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs SP - 455 UR - http://journals.pan.pl/dlibra/publication/edition/90346 T2 - Metrology and Measurement Systems ER -