Szczegóły

Tytuł artykułu

The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

Tytuł czasopisma

Metrology and Measurement Systems

Rocznik

2015

Wolumin

vol. 22

Numer

No 3

Autorzy

Słowa kluczowe

IGBT ; thermal resistance ; measurements ; transistor ; semiconductor devices

Wydział PAN

Nauki Techniczne

Zakres

455-464

Wydawca

Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation

Data

2015[2015.01.01 AD - 2015.12.31 AD]

Typ

Artykuły / Articles

Identyfikator

DOI: 10.1515/mms-2015-0036 ; ISSN 0860-8229

Referencje

Górecki (2000), The pulse methods of the thermal parameters measurement in the Darlington Power transistor Metrol Meas, Syst, 7, 287. ; Górecki (2014), The semiconductor device thermal model taking into account non - linearity and multhipathing of the cooling system Journal of Physics, Conference Series, 494. ; Zarębski (2008), A Method of the Thermal Resistance Measurements of Semiconductor Devices with Junction, Measurement, 41, 259, doi.org/10.1016/j.measurement.2006.11.009 ; Zarębski (2010), The electrothermal large - signal model of power MOS transistors for SPICE IEEE Transaction on Power, Electronics, 25, 1265. ; Castellazzi (2006), Reliability analysis and modeling of power MOSFETs in the PowerNet IEEE Transactions on Power, Electronics, 21, 603. ; Frankiewicz (2014), Investigation of heat transfer in integrated circuits Metrol Meas, Syst, 21, 111. ; Szekely (1997), A New Evaluation Method of Thermal Transient Measurement Results Microelectronic, Journal, 28, 277.
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