Title

Effect of rotation on a semiconducting medium with two-temperatures under L-S theory

Journal title

Archives of Thermodynamics

Yearbook

2017

Issue

No 2

Authors

Othman, Mohamed I.A. ; Tantawi, Ramadan S. ; Eraki, Ebtesam E.M.

Keywords

normal mode analysis ; Lord-Shulman theory ; rotation ; conductive temperature ; semiconductors

Divisions of PAS

Nauki Techniczne

Coverage

101-122

Publisher

The Committee of Thermodynamics and Combustion of the Polish Academy of Sciences and The Institute of Fluid-Flow Machinery Polish Academy of Sciences

Date

2017

Type

Artykuły / Articles

Identifier

DOI: 10.1515/aoter-2017-0012

Source

Archives of Thermodynamics; 2017; No 2; 101-122

References

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Editorial Board

International Advisory Board

J. Bataille, Ecole Central de Lyon, Ecully, France

A. Bejan, Duke University, Durham, USA

W. Blasiak, Royal Institute of Technology, Stockholm, Sweden

G. P. Celata, ENEA, Rome, Italy

L.M. Cheng, Zhejiang University, Hangzhou, China

M. Colaco, Federal University of Rio de Janeiro, Brazil

J. M. Delhaye, CEA, Grenoble, France

M. Giot, Université Catholique de Louvain, Belgium

K. Hooman, University of Queensland, Australia

D. Jackson, University of Manchester, UK

D.F. Li, Kunming University of Science and Technology, Kunming, China

K. Kuwagi, Okayama University of Science, Japan

J. P. Meyer, University of Pretoria, South Africa

S. Michaelides, Texas Christian University, Fort Worth Texas, USA

M. Moran, Ohio State University, Columbus, USA

W. Muschik, Technische Universität Berlin, Germany

I. Müller, Technische Universität Berlin, Germany

H. Nakayama, Japanese Atomic Energy Agency, Japan

S. Nizetic, University of Split, Croatia

H. Orlande, Federal University of Rio de Janeiro, Brazil

M. Podowski, Rensselaer Polytechnic Institute, Troy, USA

A. Rusanov, Institute for Mechanical Engineering Problems NAS, Kharkiv, Ukraine

M. R. von Spakovsky, Virginia Polytechnic Institute and State University, Blacksburg, USA

A. Vallati, Sapienza University of Rome, Italy

H.R. Yang, Tsinghua University, Beijing, China