Tytuł artykułu

Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

Tytuł czasopisma

Metrology and Measurement Systems

Rocznik

2016

Wolumin

vol. 23

Numer

No 3

Autorzy

Bisewski, Damian ; Myśliwiec, Marcin ; Górecki, Krzysztof ; Kisiel, Ryszard ; Zarębski, Janusz

Słowa kluczowe

Schottky diodes ; transient thermal impedance ; thermal measurements ; Silicon carbide ; packaging

Wydział PAN

Nauki Techniczne

Zakres

451-459

Wydawca

Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation

Data

2016.09.30

Typ

Artykuły / Articles

Identyfikator

DOI: 10.1515/mms-2016-0033 ; ISSN 0860-8229

Źródło

Metrology and Measurement Systems; 2016; vol. 23; No 3; 451-459

Referencje

Starzak (2013), Behavioral approach to SiC MPS diode electrothermal model generation on, IEEE Transactions Electron Devices, 60, 630, doi.org/10.1109/TED.2012.2222887 ; Alexakis (2014), Improved electrothermal ruggedness in Sic mosfets compared with silicon IGBTS on, IEEE Transactions Electron Devices, 61, 2278, doi.org/10.1109/TED.2014.2323152 ; Górecki (2014), The influence of the selected factors on transient thermal impedance of semiconductor devices of the st International Conference Mixed Design of Integrated Circuits and Systems MIXDES, Proc, 21. ; Górecki (2014), The semiconductor device thermal model taking into account non - linearity and multhipathing of the cooling system of Physics :, Journal Conference Series, 494, doi.org/10.1088/1742-6596/494/1/012008 ; Górecki (2015), An influence of the selected factors on the transient thermal impedance model of power MOSFET Informacije MIDEM - of Microelectronics , Electronic and Materials, Journal Components, 45, 110. ; Górecki (2015), The analysis of accuracy of the selected methods of measuring thermal resistance of IGBTs, Metrol Meas Syst, 22, 455, doi.org/10.1515/mms-2015-0036 ; Myśliwiec (2015), Materials and technological aspects of high - temperature SiC device packages Reliability, Microelectronics International, 32, 143, doi.org/10.1108/MI-01-2015-0009 ; Zarębski (2008), A Method of the Thermal Resistance Measurements of Semiconductor Devices with Junction, Measurement, 41, 259, doi.org/10.1016/j.measurement.2006.11.009 ; Górecki (2014), Parameter estimation of the electrothermal model of the ferromagnetic core, Microelectronics Reliability, 54, 978, doi.org/10.1016/j.microrel.2014.02.003 ; Szekely (1997), A New Evaluation Method of Thermal Transient Measurement Results, Microelectronic Journal, 28, 277, doi.org/10.1016/S0026-2692(96)00031-6 ; Buttay (2011), High - Temperature Behavior of SiC Power Devices of th European Conference on Power Electronics and Applications EPE, Proc, 1. ; Blackburn (1976), Transient Thermal Response Measurements of Power Transistors on and, IEEE Transactions Industrial Electronics Control Instrum, 22, 134. ; Székely (1998), Thermal Testing and Control by Means of Built - in Temperature Sensors, Electronics Cooling, 4, 36. ; Kisiel (2010), An Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Devices of ISSE, Proc, 128. ; Blackburn (2004), Temperature Measurements of Semiconductor Devices - th IEEE Semicon Thermal Measur and Menagement Symp SEMI - THERM San, Review, 20, 70. ; Buttay (2012), Thermal Stability of Silicon Carbide Power devices on, IEEE Transactions Electron Devices, 59, 761, doi.org/10.1109/TED.2011.2181390