Szczegóły Szczegóły PDF BIBTEX RIS Tytuł artykułu Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes Tytuł czasopisma Metrology and Measurement Systems Rocznik 2016 Wolumin vol. 23 Numer No 3 Autorzy Bisewski, Damian ; Myśliwiec, Marcin ; Górecki, Krzysztof ; Kisiel, Ryszard ; Zarębski, Janusz Słowa kluczowe Schottky diodes ; transient thermal impedance ; thermal measurements ; Silicon carbide ; packaging Wydział PAN Nauki Techniczne Zakres 451-459 Wydawca Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation Data 2016.09.30 Typ Artykuły / Articles Identyfikator DOI: 10.1515/mms-2016-0033 ; ISSN 0860-8229 Źródło Metrology and Measurement Systems; 2016; vol. 23; No 3; 451-459 Referencje Starzak (2013), Behavioral approach to SiC MPS diode electrothermal model generation on, IEEE Transactions Electron Devices, 60, 630, doi.org/10.1109/TED.2012.2222887 ; Alexakis (2014), Improved electrothermal ruggedness in Sic mosfets compared with silicon IGBTS on, IEEE Transactions Electron Devices, 61, 2278, doi.org/10.1109/TED.2014.2323152 ; Górecki (2014), The influence of the selected factors on transient thermal impedance of semiconductor devices of the st International Conference Mixed Design of Integrated Circuits and Systems MIXDES, Proc, 21. ; Górecki (2014), The semiconductor device thermal model taking into account non - linearity and multhipathing of the cooling system of Physics :, Journal Conference Series, 494, doi.org/10.1088/1742-6596/494/1/012008 ; Górecki (2015), An influence of the selected factors on the transient thermal impedance model of power MOSFET Informacije MIDEM - of Microelectronics , Electronic and Materials, Journal Components, 45, 110. ; Górecki (2015), The analysis of accuracy of the selected methods of measuring thermal resistance of IGBTs, Metrol Meas Syst, 22, 455, doi.org/10.1515/mms-2015-0036 ; Myśliwiec (2015), Materials and technological aspects of high - temperature SiC device packages Reliability, Microelectronics International, 32, 143, doi.org/10.1108/MI-01-2015-0009 ; Zarębski (2008), A Method of the Thermal Resistance Measurements of Semiconductor Devices with Junction, Measurement, 41, 259, doi.org/10.1016/j.measurement.2006.11.009 ; Górecki (2014), Parameter estimation of the electrothermal model of the ferromagnetic core, Microelectronics Reliability, 54, 978, doi.org/10.1016/j.microrel.2014.02.003 ; Szekely (1997), A New Evaluation Method of Thermal Transient Measurement Results, Microelectronic Journal, 28, 277, doi.org/10.1016/S0026-2692(96)00031-6 ; Buttay (2011), High - Temperature Behavior of SiC Power Devices of th European Conference on Power Electronics and Applications EPE, Proc, 1. ; Blackburn (1976), Transient Thermal Response Measurements of Power Transistors on and, IEEE Transactions Industrial Electronics Control Instrum, 22, 134. ; Székely (1998), Thermal Testing and Control by Means of Built - in Temperature Sensors, Electronics Cooling, 4, 36. ; Kisiel (2010), An Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Devices of ISSE, Proc, 128. ; Blackburn (2004), Temperature Measurements of Semiconductor Devices - th IEEE Semicon Thermal Measur and Menagement Symp SEMI - THERM San, Review, 20, 70. ; Buttay (2012), Thermal Stability of Silicon Carbide Power devices on, IEEE Transactions Electron Devices, 59, 761, doi.org/10.1109/TED.2011.2181390