Szczegóły

Tytuł artykułu

Dopant-Based Charge Sensing Utilizing P-I-N Nanojunction

Tytuł czasopisma

Metrology and Measurement Systems

Rocznik

2017

Wolumin

vol. 24

Numer

No 2

Autorzy

Słowa kluczowe

nanosensor ; silicon ; p-i-n junction ; dopant ; Kelvin probe force microscope

Wydział PAN

Nauki Techniczne

Zakres

391–399

Wydawca

Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation

Data

2017.06.30

Typ

Artykuły / Articles

Identyfikator

DOI: 10.1515/mms-2017-0029 ; ISSN 2080-9050, e-ISSN 2300-1941

Źródło

Metrology and Measurement Systems; 2017; vol. 24; No 2; 391–399

Referencje

Nonnenmacher (1991), Kelvin probe force microscopy, Appl Phys Lett, 15, 2921. ; Diarra (2007), Ionization energy of donor and acceptor impurities in semiconductor nanowires : Importance of dielectric confinement, Phys Rev B, 24, 045301. ; Achoyan (2002), Two - dimensional p - n - junction under equilibrium conditions, Semiconductors, 21, 903. ; Ligowski (2008), Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope, Appl Phys Lett, 10, 14210. ; Sze (1981), Physics of Semiconductor Devices nd ed New York, John, 6. ; McCallum (2012), Single - ion implantation for the development of Si - based MOSFET devices with quantum functionalities, Adv Mater Sci Eng, 29, 272694. ; Lee (2014), Lithography and doping in strained Si towards atomically precise device fabrication, Nanotechnology, 30, 145302. ; Foty (1990), Impurity ionization in MOSFETs at very low temperature, Cryogenics, 23, 1056. ; Nowak (2013), Observation of Dopant - induced potential in Nanoscale Si pn Junctions by Kelvin Probe Force Microscope Shizuoka University, Thesis, 32. ; Amarasinghea (2003), Model for random telegraph signals in sub - micron MOSFETS Solid - State, Electron, 12, 1443. ; Anwar (2011), Effect of electron injection into phosphorus donors in silicon - on - insulator channel observed by Kelvin probe force microscopy, Appl Phys Lett, 16, 213101. ; Guo (2006), High sensitivity and nonlinearity of carbon nanotube charge - based sensors, Appl Phys, 3, 084301. ; Tyszka (2015), Comparative study of donor - induced quantum dots in Si nano - channels by single - electron transport characterization and Kelvin probe force microscopy, Appl Phys, 22, 244307. ; Neumann (2013), Graphene - based charge sensors, Nanotechnology, 4, 44. ; Simoen (1992), Explaining the amplitude of RTS noise in submicrometer MOSFETs Devices, IEEE Trans Electron, 11, 422. ; White (1972), Characterization of thin - oxide MNOS memory transistors Devices, IEEE Trans Electron, 19, 1280. ; Nowak (2013), Effects of deep - level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope, Appl Phys Lett, 18, 083109. ; Rommel (2013), Influence of parasitic capacitances on conductive AFM I V measurements and approaches for its reduction, Vac Sci Technol, 9, 01. ; Reuter (2005), Depletion characteristics of two - dimensional lateral pn - junctions, Appl Phys Lett, 28, 162110. ; Udhiarto (2012), Photon - Induced Random Telegraph Signal Due to potential Fluctuation of a Single Donor - Acceptor Pair in Nanoscale Si p - n Junctions, Appl Phys Express, 14, 112201. ; Kassies (2004), van der Removing interference and optical feedback artifacts in atomic force microscopy measurements by application of high frequency laser current modulation, Rev Sci Instrum, 17, 689. ; Moraru (2014), Individuality of dopants in silicon nano - pn junctions, Materials Science, 27, 129. ; Pierre (2010), Single - donor ionization energies in a nanoscale CMOS channel, Nat Nanotechnol, 25, 133. ; Lee (2010), Characterization of random telegraph noise in gate induced drain leakage current of n - and p - type metal - oxide - semiconductor field - effect transistors, Appl Phys Lett, 13, 043502. ; Yang (2006), Single p - Type / Intrinsic n - Type Silicon Nanowires as Nanoscale Avalanche Photodetectors, Nano Lett, 7, 2929. ; Purwiyanti (2013), Dopantinduced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures, Appl Phys Lett, 26, 243102.

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