Title

Edge termination design for 1.7 kV silicon carbide p-i-n diodes

Journal title

Bulletin of the Polish Academy of Sciences Technical Sciences

Yearbook

2020

Volume

68

Issue

No. 2 (i.a. Special Section on Computational Intelligence in Communications)

Authors

Taube, A. ; Sochacki, M.

Keywords

edge termination ; silicon carbide ; 4H-SiC ; p-i-n diode ; breakdown voltage ; JTE

Divisions of PAS

Nauki Techniczne

Coverage

367-375

Date

30.04.2020

Type

Article

Identifier

DOI: 10.24425/bpasts.2020.133108

Source

Bulletin of the Polish Academy of Sciences: Technical Sciences; 2020; 68; No. 2 (i.a. Special Section on Computational Intelligence in Communications); 367-375