Details Details PDF BIBTEX RIS Title Edge termination design for 1.7 kV silicon carbide p-i-n diodes Journal title Bulletin of the Polish Academy of Sciences Technical Sciences Yearbook 2020 Volume 68 Issue No. 2 (i.a. Special Section on Computational Intelligence in Communications) Authors Taube, A. ; Sochacki, M. Keywords edge termination ; silicon carbide ; 4H-SiC ; p-i-n diode ; breakdown voltage ; JTE Divisions of PAS Nauki Techniczne Coverage 367-375 Date 30.04.2020 Type Article Identifier DOI: 10.24425/bpasts.2020.133108 Source Bulletin of the Polish Academy of Sciences: Technical Sciences; 2020; 68; No. 2 (i.a. Special Section on Computational Intelligence in Communications); 367-375 <div class="test"></div>