Details
Title
Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog CircuitsJournal title
International Journal of Electronics and TelecommunicationsYearbook
2021Volume
vol. 67Issue
No 4Authors
Affiliation
Smaani, Billel : Ingénierie des Systémes Electriques Department, Faculty of Technology, Boumerdes University, Algeria ; Meraihi, Yacin : Laboratoire d'Ingénierie et Systèmes de Télécommunications, Faculté de Technologie, Boumerdes, Algeria ; Nafa, Fares : Laboratoire d'Ingénierie et Systèmes de Télécommunications, Faculté de Technologie, Boumerdes, Algeria ; Benlatreche, Mohamed Salah : Centre Universitaire Abdel Hafid Boussouf Mila, Algeria ; Akroum, Hamza : Laboratoire d’Automatique Appliquée, Université M’Hamed Bougara de Boumerdes, Algeria ; Latreche, Saida : Laboratoire Hyperfréquences et Semiconducteurs, Electronique Department, Constantine 1 University, AlgeriaKeywords
double-gate MOSFET ; compact model ; ultra lowpower analog circuitsDivisions of PAS
Nauki TechniczneCoverage
609-614Publisher
Polish Academy of Sciences Committee of Electronics and TelecommunicationsBibliography
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