Details

Title

Signal processing for time resolved photoluminescence spectroscopy

Journal title

Opto-Electronics Review

Yearbook

2021

Volume

29

Issue

3

Authors

Affiliation

Grodecki, Kacper : Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland ; Murawski, Krzysztof : Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland ; Rutkowski, Jarosław : Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland ; Kowalewski, Andrzej : Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland ; Sobieski, Jan : Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland

Keywords

epitaxy ; HgCdTe ; photoluminescence ; time resolved photoluminescence

Divisions of PAS

Nauki Techniczne

Coverage

91-96

Publisher

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Bibliography

  1. Kopytko, M. et al. High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD. Opto-Electron. Rev. 21, 402–405 (2013). https://doi.org/10.2478/s11772-013-0101-y
  2. Kopytko, M., Kebłowski, A., Gawron, W. & Madejczyk, P. Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors. Opto-Electron. Rev. 23, 143–148 (2015). https://doi.org/10.1515/oere-2015-0017
  3. Rogalski, A. HgCdTe infrared detector material: History, status and outlook. Rep. Prog. Phys. 68, 2267–2336 (2005). https://doi.org/10.1088/0034-4885/68/10/R01
  4. Bhan, R. K. & Dhar, V. Recent infrared detector technologies, applications, trends and development of HgCdTe based cooled infra-red focal plane arrays and their characterization. Opto-Electron. Rev. 27, 174–193 (2019). https://doi.org/10.1016/j.opelre.2019.04.004
  5. Izhnin, I. et al. Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs. Opto-Electron. Rev. 21, 390–394 (2013). https://doi.org/10.2478/s11772-013-0103-9
  6. Madejczyk, P. et al. Control of acceptor doping in MOCVD HgCdTe epilayers. Opto-Electron. Rev. 18, 271–276 (2010). https://doi.org/10.2478/s11772-010-1023-x
  7. Martyniuk, P., Koźniewski, A., Kebłowski, A., Gawron, W. & Rogalski, A. MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions. Opto-Electron. Rev. 22, 118–126 (2014). https://doi.org/10.2478/s11772-014-0186-y
  8. Piotrowski, J. et al. Uncooled MWIR and LWIR photodetectors in Poland. Opto-Electron. Rev. 18, 318–327 (2010). https://doi.org/10.2478/s11772-010-1022-y
  9. Wang, H., Hong, J., Yue, F., Jing, C. & Chu, J. Optical homogeneity analysis of Hg1−xCdxTe epitaxial layers: How to circumvent the influence of impurity absorption bands? Infrared Phys. Technol. 82, 1–7 (2017). https://doi.org/10.1016/j.infrared.2017.02.007
  10. Yue, F., Wu, J. & Chu, J. Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra. Appl. Phys. Lett. 93, 131909 (2008). https://doi.org/10.1063/1.2983655
  11. Yue, F. Y. et al. Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications. Chin. Phys. B 28, 17104 (2019). https://doi.org/10.1088/1674-1056/28/1/017104
  12. Hyvärinen, A. & Oja, E. Independent component analysis: Algorithms and applications. Neural Netw. 13, 411–430 (2000). https://doi.org/10.1016/S0893-6080(00)00026-5
  13. Grodecki, K. et al. Enhanced Raman spectra of hydrogen-intercalated quasi-free-standing monolayer graphene on 4H-SiC(0001). Physica E 117, 113746 (2020). https://doi.org/10.1016/j.physe.2019.113746
  14. Grodecki, K. & Murawski, K. New data analysis method for time-resolved infrared photoluminescence spectroscopy. Appl. Spectrosc. 75, 596-599 (2020). https://doi.org/10.1177/0003702820969700
  15. Hong-Yan, L., Zhao, Q. H., Ren, G. L. & Xiao, B. J. Speech enhancement algorithm based on independent component analysis. in 5th Int. Conf. on Natural Computation (ICNC 2009) 2, 598–602 (2009). https://doi.org/10.1109/ICNC.2009.76
  16. Wen, S. & Ding, D. FASTICA-based firefighters speech noise reduction. in Proc. 2015 of 8th Int. Congress on Image and Signal Processing (CISP 2015) 1423–1426 (2016). https://doi.org/10.1109/CISP.2015.7408106
  17. Yue, F. Y. et al. Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications. Chin. Phys. B 28, 17104–017104 (2019). https://doi.org/10.1088/1674-1056/28/1/017104
  18. Zhang, X. et al. Infrared photoluminescence of arsenic-doped HgCdTe in a wide temperature range of up to 290 K. J. Appl. Phys. 110, 043503 (2011). https://doi.org/10.1063/1.3622588

Date

27.09.2021

Type

Article

Identifier

DOI: 10.24425/opelre.2021.139038
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