Details

Title

Signal processing for time resolved photoluminescence spectroscopy

Journal title

Opto-Electronics Review

Yearbook

2021

Volume

29

Issue

3

Affiliation

Grodecki, K. : Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland ; Murawski, K. : Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland ; Rutkowski, J. : Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland ; Kowalewski, A. : Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland ; Sobieski, J. : Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland

Authors

Keywords

epitaxy ; HgCdTe ; photoluminescence ; time resolved photoluminescence

Divisions of PAS

Nauki Techniczne

Coverage

91-96

Bibliography

[1] Kopytko, M. et al. High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD. Opto-Electron. Rev. 21, 402–405 (2013). https://doi.org/10.2478/s11772-013-0101-y [2] Kopytko, M., Kebłowski, A., Gawron, W. & Madejczyk, P. Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors. Opto-Electron. Rev. 23, 143–148 (2015). https://doi.org/10.1515/oere-2015-0017 [3] Rogalski, A. HgCdTe infrared detector material: History, status and outlook. Rep. Prog. Phys. 68, 2267–2336 (2005). https://doi.org/10.1088/0034-4885/68/10/R01 [4] Bhan, R. K. & Dhar, V. Recent infrared detector technologies, applications, trends and development of HgCdTe based cooled infra-red focal plane arrays and their characterization. Opto-Electron. Rev. 27, 174–193 (2019). https://doi.org/10.1016/j.opelre.2019.04.004 [5] Izhnin, I. et al. Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs. Opto-Electron. Rev. 21, 390–394 (2013). https://doi.org/10.2478/s11772-013-0103-9 [6] Madejczyk, P. et al. Control of acceptor doping in MOCVD HgCdTe epilayers. Opto-Electron. Rev. 18, 271–276 (2010). https://doi.org/10.2478/s11772-010-1023-x [7] Martyniuk, P., Koźniewski, A., Kebłowski, A., Gawron, W. & Rogalski, A. MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions. Opto-Electron. Rev. 22, 118–126 (2014). https://doi.org/10.2478/s11772-014-0186-y [8] Piotrowski, J. et al. Uncooled MWIR and LWIR photodetectors in Poland. Opto-Electron. Rev. 18, 318–327 (2010). https://doi.org/10.2478/s11772-010-1022-y [9] Wang, H., Hong, J., Yue, F., Jing, C. & Chu, J. Optical homogeneity analysis of Hg1−xCdxTe epitaxial layers: How to circumvent the influence of impurity absorption bands? Infrared Phys. Technol. 82, 1–7 (2017). https://doi.org/10.1016/j.infrared.2017.02.007 [10] Yue, F., Wu, J. & Chu, J. Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra. Appl. Phys. Lett. 93, 131909 (2008). https://doi.org/10.1063/1.2983655 [11] Yue, F. Y. et al. Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications. Chin. Phys. B 28, 17104 (2019). https://doi.org/10.1088/1674-1056/28/1/017104 [12] Hyvärinen, A. & Oja, E. Independent component analysis: Algorithms and applications. Neural Netw. 13, 411–430 (2000). https://doi.org/10.1016/S0893-6080(00)00026-5 [13] Grodecki, K. et al. Enhanced Raman spectra of hydrogen-intercalated quasi-free-standing monolayer graphene on 4H-SiC(0001). Physica E 117, 113746 (2020). https://doi.org/10.1016/j.physe.2019.113746 [14] Grodecki, K. & Murawski, K. New data analysis method for time-resolved infrared photoluminescence spectroscopy. Appl. Spectrosc. 75, 596-599 (2020). https://doi.org/10.1177/0003702820969700 [15] Hong-Yan, L., Zhao, Q. H., Ren, G. L. & Xiao, B. J. Speech enhancement algorithm based on independent component analysis. in 5th Int. Conf. on Natural Computation (ICNC 2009) 2, 598–602 (2009). https://doi.org/10.1109/ICNC.2009.76 [16] Wen, S. & Ding, D. FASTICA-based firefighters speech noise reduction. in Proc. 2015 of 8th Int. Congress on Image and Signal Processing (CISP 2015) 1423–1426 (2016). https://doi.org/10.1109/CISP.2015.7408106 [17] Yue, F. Y. et al. Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications. Chin. Phys. B 28, 17104–017104 (2019). https://doi.org/10.1088/1674-1056/28/1/017104 [18] Zhang, X. et al. Infrared photoluminescence of arsenic-doped HgCdTe in a wide temperature range of up to 290 K. J. Appl. Phys. 110, 043503 (2011). https://doi.org/10.1063/1.3622588

Date

27.09.2021

Type

Article

Identifier

DOI: 10.24425/opelre.2021.139038
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