Details
Title
Application of cross-correlation-based transimpedance amplifier in InAs and InAsSb IR detectors noise measurementsJournal title
Opto-Electronics ReviewYearbook
2022Volume
30Issue
2Authors
Affiliation
Achtenberg , Krzysztof : Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland ; Mikołajczyk, Janusz : Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland ; Bielecki, Zbigniew : Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, PolandKeywords
cross-correlation ; IR detectors ; noise ; transimpedance amplifier ; InAs ; InAsSbDivisions of PAS
Nauki TechniczneCoverage
e141126Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyBibliography
- Vandamme, L. J. Noise as a diagnostic tool for quality and reliability of electronic devices. IEEE Trans. Electron. Devices. 41, 2176–2187 (1994). https://doi.org/10.1109/16.333839
- Kotarski, M. & Smulko, J. M. Noise measurement set-ups for fluctuations-enhanced gas sensing. Metrol. Meas. Syst. 16, 457–464 (2009). http://www.metrology.pg.gda.pl/full/2009/M&MS_2009_457.pdf
- Jones, B. Electrical noise as a reliability indicator in electronic devices and components. IEE Proc. G 149, 13–22 (2002). https://doi.org/10.1049/ip-cds:20020331
- Dyakonova, N., Karandashev, S. , Levinshtein, M .E., Matveev, B. A. & Remennyi, M. A. Low frequency noise in p-InAsSbP / n-InAs infrared photodiodes. Semicond. Sci. Technol. 33, 065016 (2018). https://doi.org/10.1088/1361-6641/aac15d
- Ciura, L., Kolek, A., Michalczewski, K., Hackiewicz, K. & Martyniuk, P. 1/f noise in InAs/InAsSb superlattice photoconductors. IEEE Trans. Electron Devices. 67, 3205–3210 (2020). https://doi.org/10.1109/TED.2020.2998449
- Savich, G. , Pedrazzani, J. R., Sidor, D. E., Maimon, S. & Wicks, G. W. Dark current filtering in unipolar barrier infrared detectors. Appl. Phys. Lett. 99, 121112 (2011). https://doi.org/10.1063/1.3643515
- Cervera, C. et al. Dark current and noise measurements of an InAs/GaSb superlattice photodiode operating in the midwave infrared domain. Electron. Mater. 41, 2714–2718 (2012). https://doi.org/10.1007/s11664-012-2035-4
- Ciofi, C., Giusi, G., Scandurra, G. & Neri, B. Dedicated instrumentation for high sensitivity, low frequency noise measurement systems. Noise Lett. 4, L385–L402 (2004). https://doi.org/10.1142/S0219477504001963
- Horowitz, P. & Hill, W. The Art of Electronics (Cambridge University Press, 2015).
- Achtenberg, K. et al. Low-frequency noise measurements of IR photodetectors with voltage cross correlation system. Measurement 183, 109867 (2021). https://doi.org/10.1016/j.measurement.2021.109867
- Ciura, Ł., Kolek, A., Gawron, W., Kowalewski, A. & Stanaszek, D. Measurements of low frequency noise of infrared photodetectors with transimpedance detection system. Meas. Syst. 21,
461–472 (2014). https://doi.org/10.2478/mms-2014-0039 - Giusi, G., Pace, C. & Crupi, F. Cross-correlation-based trans-impedance amplifier for current noise measurements. J. Circ. Theor. Appl. 37, 781–792 (2008). https://doi.org/10.1002/cta.517
- Jaworowicz, K., Ribet-Mohamed, I., Cervera, C., Rodriguez, J. & Christol, P. Noise characterization of midwave infrared InAs/GaSb superlattice pin photodiode. IEEE Photon. Technol. 23, 242–244 (2011). https://doi.org/10.1109/lpt.2010.2093877
- Taalat, R., Christol, P. & Rodriguez, J. Dark current and noise measurements of an InAs/GaSb superlattice photodiode operating in the midwave infrared domain. Electron. Mater. 41, 2714–2718 (2012). https://doi.org/10.1007/s11664-012-2035-4
- Ramos, D. et al. 1/f noise and dark current correlation in midwave InAs/GaSb Type-II superlattice IR detectors. Status Solidi A. 218, 2000557 (2020). https://doi.org/10.1002/pssa.202000557
- De Iacovo, A., Venettacci, C., Colace, L. & Foglia, S. Noise performance of PbS colloidal quantum dot photodetectors. Phys. Lett. 111, 211104 (2017). https://doi.org/10.1063/1.5005805
- Rais, M. et al. HgCdTe photovoltaic detectors fabricated using a new junction formation technology. Microelectron. J. 31, 545–551 (2000). https://doi.org/10.1016/s0026-2692(00)00028-8
- Achtenberg, K., Mikołajczyk, J., Ciofi, C., Scandurra, G. & Bielecki, Z. Low-noise programmable voltage source. Electronics 9, 1245 (2020). https://doi.org/10.3390/electronics9081245