Details Details PDF BIBTEX RIS Title Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region Journal title Opto-Electronics Review Yearbook 2023 Volume 31 Issue special issue Authors Durlin, Quentin ; Aliane, Abdelkader ; André, Luc ; Kaya, Hacile ; Le Cocq, Mélanie ; Goudon, Valérie ; Vialle, Claire ; Veillerot, Marc ; Hartmann, Jean-Michel Affiliation Durlin, Quentin : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Aliane, Abdelkader : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; André, Luc : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Kaya, Hacile : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Le Cocq, Mélanie : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Goudon, Valérie : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Vialle, Claire : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Veillerot, Marc : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Hartmann, Jean-Michel : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France Keywords Germanium (Ge) ; photodiode ; short-wave infrared detector Divisions of PAS Nauki Techniczne Coverage e144550 Publisher Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology Date 24.02.2023 Type Article Identifier DOI: 10.24425/opelre.2023.144550