Title

Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP

Journal title

Opto-Electronics Review

Yearbook

2023

Volume

31

Issue

special issue

Affiliation

Braga, Osvaldo M. : Institute for Advanced Studies, IEAV, 12228-001, São Paulo, Brazil ; Delfino, Cristian A. : Institute for Advanced Studies, IEAV, 12228-001, São Paulo, Brazil ; Kawabata, Rudy M. S. : LabSem, CETUC, Pontifícia Universidade Católica, PUC-Rio, R. Marquês de São Vicente 124, Gávea, 22451-900 Rio de Janeiro, Brazil ; Pinto, Luciana D. : LabSem, CETUC, Pontifícia Universidade Católica, PUC-Rio, R. Marquês de São Vicente 124, Gávea, 22451-900 Rio de Janeiro, Brazil ; Vieira, Gustavo S. : Institute for Advanced Studies, IEAV, 12228-001, São Paulo, Brazil ; Pires, Maurício P. : Physics Institute, Federal University of Rio de Janeiro, Av. Athos da Silveira Ramos 149, 21941-909 Rio de Janeiro, Brazil ; Souza, Patricia L. : LabSem, CETUC, Pontifícia Universidade Católica, PUC-Rio, R. Marquês de São Vicente 124, Gávea, 22451-900 Rio de Janeiro, Brazil ; Marega, Euclydes : Universidade de São Paulo, USP-São Carlos, 13566-560 São Carlos, SP, Brazil ; Carlin, John A. : Ohio State University, 281 W Lane Ave., Columbus, OH 43210, USA ; Krishna, Sanjay : Ohio State University, 281 W Lane Ave., Columbus, OH 43210, USA

Authors

Braga, Osvaldo M. ; Delfino, Cristian A. ; Kawabata, Rudy M. S. ; Pinto, Luciana D. ; Vieira, Gustavo S. ; Pires, Maurício P. ; Souza, Patricia L. ; Marega, Euclydes ; Carlin, John A. ; Krishna, Sanjay

Keywords

simulation ; residual doping ; recombination velocity ; surface passivation ; regrowth

Divisions of PAS

Nauki Techniczne

Coverage

e144562

Publisher

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Date

24.02.2023

Type

Article

Identifier

DOI: 10.24425/opelre.2023.144562