Tytuł artykułu

Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP

Tytuł czasopisma

Opto-Electronics Review

Rocznik

2023

Wolumin

31

Numer

special issue

Autorzy

Braga, Osvaldo M. ; Delfino, Cristian A. ; Kawabata, Rudy M. S. ; Pinto, Luciana D. ; Vieira, Gustavo S. ; Pires, Maurício P. ; Souza, Patricia L. ; Marega, Euclydes ; Carlin, John A. ; Krishna, Sanjay

Afiliacje

Braga, Osvaldo M. : Institute for Advanced Studies, IEAV, 12228-001, São Paulo, Brazil ; Delfino, Cristian A. : Institute for Advanced Studies, IEAV, 12228-001, São Paulo, Brazil ; Kawabata, Rudy M. S. : LabSem, CETUC, Pontifícia Universidade Católica, PUC-Rio, R. Marquês de São Vicente 124, Gávea, 22451-900 Rio de Janeiro, Brazil ; Pinto, Luciana D. : LabSem, CETUC, Pontifícia Universidade Católica, PUC-Rio, R. Marquês de São Vicente 124, Gávea, 22451-900 Rio de Janeiro, Brazil ; Vieira, Gustavo S. : Institute for Advanced Studies, IEAV, 12228-001, São Paulo, Brazil ; Pires, Maurício P. : Physics Institute, Federal University of Rio de Janeiro, Av. Athos da Silveira Ramos 149, 21941-909 Rio de Janeiro, Brazil ; Souza, Patricia L. : LabSem, CETUC, Pontifícia Universidade Católica, PUC-Rio, R. Marquês de São Vicente 124, Gávea, 22451-900 Rio de Janeiro, Brazil ; Marega, Euclydes : Universidade de São Paulo, USP-São Carlos, 13566-560 São Carlos, SP, Brazil ; Carlin, John A. : Ohio State University, 281 W Lane Ave., Columbus, OH 43210, USA ; Krishna, Sanjay : Ohio State University, 281 W Lane Ave., Columbus, OH 43210, USA

Słowa kluczowe

simulation ; residual doping ; recombination velocity ; surface passivation ; regrowth

Wydział PAN

Nauki Techniczne

Zakres

e144562

Wydawca

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Data

24.02.2023

Typ

Article

Identyfikator

DOI: 10.24425/opelre.2023.144562 ; ISSN 1896-3757

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