Title

Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO₂/HfO₂ Bilayer Devices

Journal title

Archives of Metallurgy and Materials

Yearbook

2024

Volume

vol. 69

Issue

No 2

Affiliation

Cho, Min Gyoo : Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, Korea ; Go, Jae Hee : Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, Korea ; Choi, Byung Joon : Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, Korea

Authors

Cho, Min Gyoo ; Go, Jae Hee ; Choi, Byung Joon

Keywords

Atomic layer deposition ; bilayer ; self-rectifying memory ; rectification ratio

Divisions of PAS

Nauki Techniczne

Coverage

463-466

Publisher

Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences

Date

21.06.2024

Type

Article

Identifier

DOI: 10.24425/amm.2024.149767