Applied sciences

Opto-Electronics Review

Description

Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged.
It has been established for the publication of high-quality original papers from the following fields:

Optical Design and Applications,
Image Processing (without AI Algorithm Optimisation)
Plasmonics, Nanooptics, and Metamaterials,
Optoelectronic Materials,
Micro-Opto-Electro-Mechanical Systems,
Infrared Physics and Technology,
Modelling of Optoelectronic Devices, Semiconductor Lasers

Technology and Fabrication of Optoelectronic Devices,
Photonic Crystals,
Laser Physics, Technology and Applications,
Optical Sensors and Applications,
Photovoltaics,
Biomedical Optics and Photonics

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Journal Metrics:

JCR Impact Factor 2024:	0.9
5 Year Impact Factor 2023:	1.3
SCImago Journal Rank (SJR) 2024:	0.240
Source Normalized Impact per Paper (SNIP) 2024:	0.453
CiteScore 2024:	1.8
Ministry of Science and Higher Education*:	100 points

* changed Dec. 1st, 2021

From 1992 to 2005 the Journal was published only in the paper form. From 2006 it was available also online. Since 2017 Opto-Eelectronics Review is published only in electronic form. All volumes issued online by the end of 2019 can be found on the following websites:

Years 2017-2019: https://www.sciencedirect.com/journal/opto-electronics-review/issues
Years 2015-2016: https://www.degruyter.com/view/j/oere
Years 2006-2014: https://link.springer.com/journal/volumesAndIssues/11772
Years 1992-2005 (scanned version): https://optor.wat.edu.pl/contents.htm

ISSN

ISSN 1896-3757

Publishers

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Opto-Electronics Review - Editorial Board

Editor-in-Chief:
L. R. JAROSZEWICZ, Military University of Technology, Warsaw, Poland

Deputy Editor-in Chief:
P. MARTYNIUK, Military University of Technology, Warsaw, Poland

Board of Co-editors:

Optical Design and Applications
V.O. ANGELSKY, Chernivtsi National University, Chernivtsi, Ukraine

Image Processing
M. JÓZWIK, Warsaw University of Technology, Warsaw, Poland

Plasmonics, Nanooptics, and Metamaterials
T. ANTOSIEWICZ, Warsaw University, Warsaw, Poland

Modelling of Optoelectronic Devices. Semiconductor Lasers
M. DEMS, Łódź Technical University, Łódź, Poland

Optoelectronics Materials
D. DOROSZ, AGH University of Science and Technology, Cracow, Poland

Infrared Physics and Technology
M. KOPYTKO, Military University of Technology, Warsaw, Poland
F. WANG, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China

Technology and Fabrication of Optoelectronic Devices
J. MUSZALSKI, Institute of Electron Technology, Warsaw, Poland

Photonic Crystals
K. PANAJOTOV, Vrije Universiteit Brussels, Brussels, Belgium

Laser Physics, Technology and Applications
J. ŚWIDERSKI, Warsaw University of Technology, Warsaw, Poland

Optical Sensors and Applications
M. ŚMIETANA, Warsaw University of Technology, Warsaw, Poland

Photovoltaics
A. IWAN, Military Institute of Engineer Technology, Wroclaw, Poland

Biomedical Optics and Photonics
A. LIEBERT, Institute of Biocybernetics and Biomedical Engineering, Warsaw, Poland

International Editorial Advisory Board

D. BIMBERG, Technische Universitaet Berlin, Berlin, Germany

F. CAPASSO, Harvard University, Cambridge, USA

P.G. ELISEEV, University of New Mexico, Albuquerque, USA

P. HARING−BOLIVAR, University of Siegen, Siegen, Germany

M. HENINI, University of Nottingham, Nottingham, England

B. JASKORZYNSKA, Royal Institute of Technology, Kista, Sweden

M. KIMATA, Ritsumeikan University, Shiga, Japan

R. KLETTE, University of Auckland, Auckland, New Zealand

S. KRISHNA, University of New Mexico, Albuquerque, USA

J. MISIEWICZ, Wrocław University of Technology, Wrocław, Poland

E. OZBAY, Bilkent University, Ankara, Turkey

J.G. PELLEGRINI, Night Vision and Electronic Sensors Directorate, Fort Belvoir, USA

M. RAZEGHI, Northwestern University, Evanston, USA

A. ROGALSKI, Military University of Technology, Warsaw, Poland

P. RUSSELL, Max Planck Institute for the Science of Light, Erlangen, Germany

V. RYZHII, University of Aizu, Aizu, Japan

B. SAKOWICZ, Lodz University of Technology, Poland

C. SIBILIA, Universita' di Roma “La Sapienza”, Roma, Italy

A. TORRICELLI, Politecnico di Milano, Milano, Italy

T. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

W. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

S.−T. WU, University of Central Florida, Orlando, USA

Language Editor

J. Kulesza, e-mail: jolanta.kulesza@wat.edu.pl

Managing Editor:

R.Podraza, e-mail: renata.podraza@wat.edu.pl

Publisher:

Polish Academy of Sciences and Association of Polish Electrical Engineers

Editorial office:

Military University of Technology,

ul. gen. Sylwestra Kaliskiego 2

00 – 908 Warsaw, Poland

opelre@wat.edu.pl

Opto-Electronics Review is an open access journal with all content available with no charge in full text version.

The journal content is available under the Creative Commons Attribution 4.0 International License ( https://creativecommons.org/licenses/by/4.0/).

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Content

Opto-Electronics Review | 2023 | 31 | special issue

1 Editorial Preface

Piotr Martyniuk , Sarath D. Gunapala

Opto-Electronics Review | 2023 | 31 | special issue | e144979

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Authors and Affiliations

Piotr Martyniuk

e-mail:

ORCID:

Sarath D. Gunapala

2 SRH suppression mechanism in a non-equilibrium MWIR HgCdTe photodiode

Małgorzata Kopytko

Opto-Electronics Review | 2023 | 31 | special issue | e144548 | DOI: 10.24425/opelre.2023.144548

Keywords: HgCdTe photodiode non-equilibrium conditions fully-depleted photodiode minority carrier lifetime generation rates

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Abstract

The operation of narrow-gap semiconductor devices under non-equilibrium mode is used at temperatures where the materials are normally intrinsic. The phenomenon of minority carrier exclusion and extraction was particularly discussed in the case of the suppression of Auger thermal generation in heterojunction photodiodes, especially important in the long-wave infrared range. This paper shows that the reduction of the dark current in the HgCdTe photodiode operating in the mid-wave infrared range is primarily the result of suppression of the Shockley-Read-Hall generation in the non-equilibrium absorber. Under a reverse bias, the majority carrier concentration is held equal to the majority carrier doping level. This effect also leads to a decreased majority carrier population at the trap level and an effective increase in the carrier lifetime. The analysed device was with the following design: p+-Bp cap-barrier unit, p-type absorber doped at the level of 8 ·1015 cm−3, and wide-bandgap N+ bottom contact layer. At room temperature, the lowest dark current density of 3.12 ·10−1 A/cm2 was consistent with the theoretically predicted Shockley-Read-Hall suppression mechanism, about two times smaller than for the equilibrium case.

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Authors and Affiliations

Małgorzata Kopytko

e-mail:

ORCID:

Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00 908 Warsaw, Poland

3 Electro-optical performance and anisotropic transport study of a Ga-free type-II superlattice barrier structure

Maxime Bouschet , Vignesh Arounassalame , Anthony Ramiandrasoa , Jean-Philippe Perez , Nicolas Péré-Laperne , Isabelle Ribet-Mohamed , Philippe Christol

Opto-Electronics Review | 2023 | 31 | special issue | e144549 | DOI: 10.24425/opelre.2023.144549

Keywords: infrared photodetector type-II superlattice barrier structure Ga-free transport; anisotropy

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Abstract

In the past ten years, InAs/InAsSb type-II superlattice has emerged as a promising technology for high-temperature mid-wave infrared photodetector. Nevertheless, transport properties are still poorly understood in this type of material. In this paper, optical and electro-optical measurements have been realised on InAs/InAsSb type-II superlattice mid-wave infrared photodetectors. Quantum efficiency of 50% is measured at 150 K, on the front side illumination and simple pass configuration. Absorption measurement, as well as lifetime measurement are used to theoretically calculate the quantum efficiency thanks to Hovel’s equation. Diffusion length values have been extracted from this model ranging from 1.55 µm at 90 K to 7.44 µm at 200 K. Hole mobility values, deduced from both diffusion length and lifetime measurements, varied from 3.64 cm²/Vs at 90 K to 37.7 cm²/Vs at 200 K. The authors then discuss the hole diffusion length and mobility variations within temperature and try to identify the intrinsic transport mechanisms involved in the superlattice structure.

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Authors and Affiliations

Maxime Bouschet

1 2

Vignesh Arounassalame

Anthony Ramiandrasoa

Jean-Philippe Perez

Nicolas Péré-Laperne

Isabelle Ribet-Mohamed

Philippe Christol

IES, Université de Montpellier, CNRS, 860 Saint Priest St., F-34000 Montpellier, CEDEX 5, France
LYNRED, BP 21, 364 de Valence Ave., 38113 Veurey-Voroize, France
ONERA, Chemin de la Hunière, F-91761 Palaiseau Cedex, France

4 Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region

Quentin Durlin , Abdelkader Aliane , Luc André , Hacile Kaya , Mélanie Le Cocq , Valérie Goudon , Claire Vialle , Marc Veillerot , Jean-Michel Hartmann

Opto-Electronics Review | 2023 | 31 | special issue | e144550 | DOI: 10.24425/opelre.2023.144550

Keywords: Germanium (Ge) photodiode short-wave infrared detector

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Abstract

Germanium (Ge) PiN photodetectors are fabricated and electro-optically characterised. Unintentionally and p-type doped Ge layers are grown in a reduced-pressure chemical vapour deposition tool on a 200 mm diameter, <001>-oriented, p-type silicon (Si) substrates. Thanks to two Ge growth temperatures and the use of short thermal cycling afterwards, threading dislocation densities down to 107 cm−2 are obtained. Instead of phosphorous (P) ion implantation in germanium, the authors use in situ phosphorous-doped poly-crystalline Si (poly-Si) in the n-type regions. Secondary ion mass spectrometry revealed that P was confined in poly-Si and did not diffuse in Ge layers beneath. Over a wide range of tested device geometries, production yield was dramatically increased, with almost no short circuits. At 30 °C and at −0.1 V bias, corresponding to the highest dynamic resistance, the median dark current of 10 µm diameter photodiodes is in the 5–20 nA range depending on the size of the n-type region. The dark current is limited by the Shockley-Read-Hall generation and the noise power spectral density of the current by the flicker noise contribution. A responsivity of 0.55 and 0.33 A/W at 1.31 and 1.55 µm, respectively, is demonstrated with a 1.8 µm thick absorption Ge layer and an optimized anti-reflection coating at 1.55 µm. These results pave the way for a cost-effective technology based on group-IV semiconductors.

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Authors and Affiliations

Quentin Durlin

Abdelkader Aliane

Luc André

Hacile Kaya

Mélanie Le Cocq

Valérie Goudon

Claire Vialle

Marc Veillerot

Jean-Michel Hartmann

Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France

5 MCT heterostructures for higher operating temperature infrared detectors designed in Poland

Paweł Madejczyk , Waldemar Gawron , Jan Sobieski , Piotr Martyniuk , Jarosław Rutkowski

Opto-Electronics Review | 2023 | 31 | special issue | e144551 | DOI: 10.24425/opelre.2023.144551

Keywords: MCT HgCdTe metal organic chemical vapour deposition infrared detectors higher operating temperature

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Abstract

This paper presents examples of infrared detectors with mercury cadmium telluride elaborated at the Institute of Applied Physics, Military University of Technology and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 µm to 14 µm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.

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Authors and Affiliations

Paweł Madejczyk

e-mail:

ORCID:

Waldemar Gawron

1 2

e-mail:

ORCID:

Jan Sobieski

e-mail:

ORCID:

Piotr Martyniuk

e-mail:

ORCID:

Jarosław Rutkowski

e-mail:

ORCID:

Institute of Applied Physics, Military University of Technology, 2 gen. Kaliskiego St., 00-908 Warsaw, Poland
Vigo Photonics S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland

6 Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation

Clara Bataillon , Jean-Phillipe Perez , Rodolphe Alchaar , Alain Michez , Olivier Gilard , Olivier Saint-Pé , Philippe Christol

Opto-Electronics Review | 2023 | 31 | special issue | e144552 | DOI: 10.24425/opelre.2023.144552

Keywords: displacement damage dose proton radiation total ionizing dose type-II superlattice photodetector

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Abstract

In this work, the authors investigated the influence of proton-irradiation on the dark current of XBp longwave infrared InAs/GaSb type-II superlattice barrier detectors, showing a cut-off wavelength from 11 µm to 13 µm at 80 K. The proton irradiations were performed with 63 MeV protons and fluences up to 8∙1011 H+/cm² on a type-II superlattice detector kept at cryogenic (100 K) or room temperature (300 K). The irradiation temperature of the detector is a key parameter influencing the effects of proton irradiation. The dark current density increases due to displacement damage dose effects and this increase is more important when the detector is proton-irradiated at room temperature rather than at cryogenic temperature.

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Authors and Affiliations

Clara Bataillon

Jean-Phillipe Perez

Rodolphe Alchaar

Alain Michez

Olivier Gilard

Olivier Saint-Pé

Philippe Christol

University of Montpellier, 163 Auguste Broussonnet St., 34090 Montpellier, France
CNES, 18 Edouard Belin Ave., 31400 Toulouse, France
Airbus Defense & Space, 31 des Cosmonautes St., 31400 Toulouse, France

7 Advances in type-II superlattice research at Fraunhofer IAF

Raphael Müller , Volker Daumer , Tsvetelina Hugger , Lutz Kirste , Wolfgang Luppold , Jasmin Niemasz , Robert Rehm ,