Nauki Techniczne

Opto-Electronics Review

Zawartość

Opto-Electronics Review | 2023 | 31 | 2

Abstrakt

Vehicular visible light communication is an emerging technology that allows wireless communication between vehicles or between vehicles and infrastructure. In this paper, a vehicular visible light communication system is designed using a non-return to zero on-off keying modulation scheme under the effect of different weather conditions such as clear, haze, and fog. The first model is a light emitting diode-based system and the second is a laser diode-based system. For both models, the influence of system parameters such as beam divergence, transceiver aperture diameters, and receiver responsivity is studied. The impact of the use of the trans-impedance amplifier is also investigated for both models. It was concluded that in the presence of the amplifier, output power of the light emitting diode and laser diode model are increased by 98.46 µW and 0.4719 W, respectively. The performance of the two proposed models is evaluated through bit error rate, quality factor, eye diagram, and output power to have some insightful results about the quality of service for the two proposed models. Under a specific weather condition, the performance of the system would be critical and other techniques should be applied. The maximum achievable link distance for the laser-based and light-emitting diode-based systems is 190 m at a data rate of 25 Gbps and 80 m at a data rate of 60 kbps, respectively, under the same system parameters and weather conditions. The obtained results provide a full idea about the availability of constructing our proposed model in a practical environment, showing a higher performance of the laser diode-based model than that of the light emitting diode-based model.
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Autorzy i Afiliacje

Eslam S. El-Mokadem
1
Nagwan I. Tawfik
1
ORCID: ORCID
Moustafa H. Aly
2
ORCID: ORCID
Walid S. El-Deeb
3

  1. Department of Electronics and Communications Engineering, Higher Technological Institute, 10th of Ramadan City, Egypt
  2. Arab Academy for Science, Technology and Maritime Transport, 1029 Alexandria, Egypt
  3. Department of Electronics and Communications Engineering, Zagazig University, 44519 Zagazig, Egypt

Abstrakt

The dual-band avalanche photodiode (APD) detector based on a HgCdTe material system was designed and analysed in detail numerically. A theoretical analysis of the two-colour APD intended for the mid wavelength infrared (MWIR) and long wavelength infrared (LWIR) ranges was conducted. The main purpose of the work was to indicate an approach to select APD structure parameters to achieve the best performance at high operating temperatures (HOT). The numerical simulations were performed by Crosslight numerical APSYS platform which is designed to simulate semiconductor optoelectronic devices. The current-voltage characteristics, current gain, and excess noise analysis at temperature T = 230 K vs. applied voltage for MWIR (U = 15 V) and LWIR (U = –6 V) ranges were performed. The influence of low and high doping in both active layers and barrier on the current gain and excess noise is shown. It was presented that an increase of the APD active layer doping leads to an increase in the photocurrent gain in the LWIR detector and a decrease in the MWIR device. The dark current and photocurrent gains were compared. Photocurrent gain is higher in both spectral ranges.
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Autorzy i Afiliacje

Tetiana Manyk
1
ORCID: ORCID
Kinga Majkowycz
1
ORCID: ORCID
Jarosław Rutkowski
1
ORCID: ORCID
Piotr Martyniuk
1
ORCID: ORCID

  1. Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland

Abstrakt

This paper presents a probabilistic machine learning approach to approximate wavelength values for unmeasured positions on an opto-semiconductor wafer after epitaxy. Insufficient information about optical and opto-electronic properties may lead to undetected specification violations and, consequently, to yield loss or may cause product quality issues. Collection of information is restricted because physical measuring points are expensive and in practice samples are only drawn from 120 specific positions. The purpose of the study is to reduce the risk of uncertainties caused by sampling and measuring inaccuracy and provide reliable approximations. Therefore, a Gaussian process regression is proposed which can determine a point estimation considering measuring inaccuracy and further quantify estimation uncertainty. For evaluation, the proposed method is compared with radial basis function interpolation using wavelength measurement data of 6-inch InGaN wafers. Approximations of these models are evaluated with the root mean square error. Gaussian process regression with radial basis function kernel reaches a root mean square error of 0.814 nm averaged over all wafers. A slight improvement to 0.798 nm could be achieved by using a more complex kernel combination. However, this also leads to a seven times higher computational time. The method further provides probabilistic intervals based on means and dispersions for approximated positions.
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Autorzy i Afiliacje

Stefan M. Stroka
1 2
ORCID: ORCID
Christian Heumann
1
ORCID: ORCID
Fabian Suhrke
2
Kathrin Meindl
2

  1. Department of Statistics, Faculty of Mathematics, Informatics and Statistics, LMU Munich, 80539 Munich, Germany
  2. ams-OSRAM International GmbH, 93055 Regensburg, Germany

Abstrakt

Tris(8-hydroxyquinoline)aluminium with poly(N-vinylcarbazole) (Alq 3:PVK) or polystyrene sulfonate (Alq 3:PSS) were deposited by spin-coating on glass and silicon substrates. SEM measurements show that relatively smooth thin films were obtained. Fourier transform infrared measurements were performed to confirm the composition of the samples. The optical properties of thin films containing Alq 3:PVK and Alq 3:PSS were characterised using absorption spectroscopy and spectroscopic ellipsometry. It was found that the absorption spectrum of Alq 3:PVK is characterised by four bands, while for Alq 3:PSS only three bands are visible. The photoluminescence of the studied thin layers shows a peak with a maximum at about 500 nm. Additionally, cyclic voltammetry of Alq 3 is also presented. Theoretical density functional theory calculations provide the insight into the interaction and nature of Alq 3:PVK and Alq 3:PSS excited states. Finally, the organic light-emitting diode (OLED) structure based on Alq 3:PVK was fabricated and showed strong electro-luminescence with a green emission at 520 nm. The results of the device show that the ITO/PEDOT:PSS/Alq 3:PVK/Ca/Al system can be useful for the production of low-cost OLEDs with Alq 3:PVK as an active layer for future lighting applications.
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Autorzy i Afiliacje

Małgorzata Sypniewska
1
ORCID: ORCID
Monika Pokladko-Kowar
2
ORCID: ORCID
Anna Kaczmarek-Kedziera
3
ORCID: ORCID
Iulia E. Brumboiu
1
ORCID: ORCID
Viviana Figà
4
ORCID: ORCID
Aleksandra Apostoluk
5
ORCID: ORCID
Peng Song
6 7
Junyan Liu
6 8
ORCID: ORCID
Robert Szczesny
9
ORCID: ORCID
Ewa Gondek
2
ORCID: ORCID
Beata Derkowska-Zielinska
1
ORCID: ORCID

  1. Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Torun, Grudziądzka 5, Torun 87-100, Poland
  2. Department of Physics, Cracow University of Technology, Podchorążych 1, 30-084 Krakow, Poland
  3.  Faculty of Chemistry, Nicolaus Copernicus University in Torun, Gagarina 7, Torun 87-100, Poland
  4. Dipartimento di Scienze e Tecnologie Biologiche, Chimiche e Farmaceutiche, Università di Palermo, Viale delle Scienze, Parco d’Orleans II, 90128 Palermo, Italy
  5. Université de Lyon, INSA Lyon, ECL, CNRS, UCBL, CPE Lyon, INL, UMR5270, 69621 Villeurbanne, France
  6. State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin, 150001, China
  7. School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
  8. School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, 150001, China
  9. Faculty of Chemistry, Nicolaus Copernicus University in Torun, Gagarina 7, Torun 87-100, Poland

Abstrakt

A 100 km long dense wavelength division multiplexed optical network design with a capacity of 1.28 Tbps is proposed in this paper. The novelty of this work is the use of a dispersion compensating fibre as a Raman amplifier in the S-band for a high-capacity dense wavelength division multiplexing network. The transmission is accomplished auspiciously in the wavelength range from 196 THz to 202. 35THz. The coupling of a Raman amplifier made the realisation of the S-band possible in the network, as the erbium-doped fibre amplifier is competent for amplification in C- and L-bands only. Further, a pump coupler is used for multiple pumping to enlarge the gain spectrum for a high-capacity optical network. The performance analysis of the network is carried out systematically in terms of bit error rate (BER), eye diagram, Q-factor, and optical signal to noise ratio (OSNR). The results demonstrate that the proposed set-up shows adequately low BER, sufficient Q-factor values, wide eye-opening, and commendable OSNR for all receiving channels.
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Autorzy i Afiliacje

Baseerat Gul
1
ORCID: ORCID
Faroze Ahmad
1
ORCID: ORCID

  1.  Department of Electronics and Communication Engineering, Islamic University of Science and Technology, Kashmir, India

Abstrakt

Transport, photoluminescence, THz transmission, and optically detected cyclotron resonance studies were carried out on samples with a single modulation-doped CdTe/Cd 1-xMg xTe quantum well. THz experiments were performed at liquid helium temperatures for photon energies between about 0.5 meV and 3.5 meV. An effective mass of electron was determined to be (0.1020±0.0003)m 0. Observed photoluminescence and optically detected cyclotron resonance spectra cannot be explained within the simple model of Landau quantization of parabolic bands.
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Autorzy i Afiliacje

Jerzy Łusakowski
1
ORCID: ORCID
Maciej Zaremba
1
Adam Siemaszko
1
Krzysztof Karpierz
1
Zbigniew Adamus
2 3
ORCID: ORCID
Tomasz Wojtowicz
4
ORCID: ORCID

  1. Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
  2. Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
  3. International Research Centre Mag Top, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
  4. International Research Centre Mag Top, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland

Abstrakt

An innovative measurement setup for the dielectric characterisation of fibres in a terahertz time-domain spectrometer using an HDPE elliptical lens for coupling into the fibres has been built and validated by measurements of several different types of samples. The setup is based on a commercial all fibre-coupled terahertz time-domain spectrometer. Measurements of the effective refractive index have been conducted on polypropylene-based three-dimensional printing filaments, silica glass rods, and a polytetrafluoroethylene cord of lowered density, covering the frequency range of approximately 100 GHz to 1 THz. The theoretical part of the work includes numerical calculations performed via the finite difference eigenmode method and the characteristic equations of a uniform circular dielectric waveguide for a few guided modes, from which it is clear that primarily the fundamental mode propagates along the fibre. Details on model-based phase corrections, crucial to the accurate determination of the effective refractive index of dispersive fibres, have been presented as well.
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Autorzy i Afiliacje

Adam Pacewicz
1
ORCID: ORCID
Paweł Kopyt
1
ORCID: ORCID
Jerzy Cuper
1
ORCID: ORCID
Mateusz Krysicki
1
ORCID: ORCID
Bartłomiej Salski
1
ORCID: ORCID

  1. Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, Nowowiejska 15/19, 00-665 Warsaw, Poland

Abstrakt

This paper reports on compact CMOS-based electronic sources and detectors developed for the terahertz frequency range. It was demonstrated that with the achievable noise-equivalent power levels in a few tens of pW\Hz 1/2 and the emitted power in the range of 100 μW, one can build effective quasi-optical emitter-detector pairs operating in the 200–266 GHz range with the input power-related signal-to-noise ratio reaching 70 dB for 1 Hz-equivalent noise bandwidth. The applicability of these compact devices for a variety of applications including imaging, spectroscopy or wireless communication links was also demonstrated.
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Autorzy i Afiliacje

Dmytro B. But
1 2
ORCID: ORCID
Alexander V. Chernyadiev
1
ORCID: ORCID
Kęstutis Ikamas
3 4
ORCID: ORCID
Cezary Kołaciński
1 5
ORCID: ORCID
Anastasiya Krysl
6
Hartmut G. Roskos
6
ORCID: ORCID
Wojciech Knap
1
ORCID: ORCID
Alvydas  Lisauskas
1 3
ORCID: ORCID

  1. CENTERA, Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
  2. NOMATEN Centre of Excellence, National Centre of Nuclear Research, A. Soltana 7, 05-400 Otwock-Świerk, Poland
  3. Institute of Applied Electrodynamics and Telecommunications, Vilnius University, Saulėtekio Av. 9, LT-10222 Vilnius, Lithuania
  4. General Jonas Žemaitis Military Academy of Lithuania, Šilo Av. 5A, LT-10322 Vilnius, Lithuania
  5. Łukasiewicz Research Network Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warsaw, Poland
  6. Institute of Physics, Goethe University Frankfurt, Max-von-Laue-Str. 1, D60435 Frankfurt, Germany

Abstrakt

This paper discusses issues of using superconductors in modern accelerators, such as free-electron laser type, in a radioactive environment. It shows how irradiation damages the subtle structure of superconducting materials, especially 1D and 2D high-temperature superconductors, in which it leads to the creation of nano-sized columnar-type defects. The influence of the radiation-induced structural defects on the current-carrying properties of the superconducting materials is investigated according to a developed energetic description of the capturing process on these defects, acting as pinning centres of magnetic pancake vortices. Various initial positions of the captured vortices are analysed. The influence of the irradiation-induced defects on the current-voltage characteristics is investigated, and the maximum current density is determined as a function of irradiation intensity and such physical parameters as magnetic field, temperature, and nano-defect size. This analysis is therefore of scientific interest and should also be helpful in determining the proper operating conditions of solenoids and other superconducting elements in free-electron laser facilities.
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Autorzy i Afiliacje

Jacek Sosnowski
1
ORCID: ORCID

  1. National Centre for Nuclear Research, A. Soltana 7, 05-400 Otwock-Świerk, Poland

Abstrakt

Terahertz (THz) transmission, photoresistance, and electrical conductivity experiments were carried out at 4.2 K on a sample with modulation-doped CdTe/Cd 1-xMg xTe multiple quantum wells. The measurements were carried out as a function of a magnetic field B up to 9 T and a radiation frequency between 0.1 and 0.66 THz. A broad minimum in the transmission curve was observed at magnetic fields corresponding to the cyclotron resonance at given THz frequency which was followed at larger fields by an oscillatory signal, periodic in B −1. Shubnikov-de Haas oscillations were observed in magnetoconductivity and in photoresistance. Each of these experimental signals revealed the same electron concentration equal to (1.01 ± 0.03) ∙1012 cm −2. THz spectroscopy results are compared with data obtained on a single quantum well and are discussed from the point of view of using such multiple quantum wells as THz optical elements.
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Autorzy i Afiliacje

Jerzy Łusakowski
1 2
ORCID: ORCID
Andrzej Frączak
1
Mikołaj Grymuza
1
Eryk Imos
1
Adam Siemaszko
1
Wiktoria Solarska
1
Aniela Woyciechowska
1
Maciej Zaremba
1
Rafał Zdunek
1
Krzysztof Karpierz
1
Zbigniew Adamus
3 4
ORCID: ORCID
Tomasz Słupiński
3 4
ORCID: ORCID
Tomasz Wojtowicz
3
ORCID: ORCID

  1. Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
  2. CENTERA Laboratories, Institute of High-Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
  3. International Research Centre Mag Top, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
  4. Institute of Physics,Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland

Instrukcja dla autorów

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OPTO-ELECTRONICS REVIEW is an open access journal. This involves the payment of an article publishing charge (APC) by the authors, their institution or funding body. We make the article freely available immediately upon publication on PAS Jornals platform (https://journals.pan.pl/opelre)

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Articles submitted by June 30th, 2024: existing fee: 1750 PLN (or 400 EUR)

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Dodatkowe informacje

Opto-Electronics Review was established in 1992 for the publication of scientific papers concerning optoelectronics and photonics materials, system and signal processing. This journal covers the whole field of theory, experimental verification, techniques and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. Papers covering novel topics extending the frontiers in optoelectronics and photonics are very encouraged. The main goal of this magazine is promotion of papers presented by European scientific teams, especially those submitted by important team from Central and Eastern Europe. However, contributions from other parts of the world are by no means excluded.

Articles are published in OPELRE in the following categories:

-invited reviews presenting the current state of the knowledge,

-specialized topics at the forefront of optoelectronics and photonics and their applications,

-refereed research contributions reporting on original scientific or technological achievements,

-conference papers printed in normal issues as invited or contributed papers.

Authors of review papers are encouraged to write articles of relevance to a wide readership including both those established in this field of research and non-specialists working in related areas. Papers considered as “letters” are not published in OPELRE.

Opto-Electronics Review is published quarterly as a journal of the Association of Polish Electrical Engineers (SEP) and Polish Academy of Sciences (PAS) in cooperation with the Military University of Technology and under the auspices of the Polish Optoelectronics Committee of SEP.

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