Zinc oxide (ZnO) is a prominent n-type semiconductor material used in optoelectronic devices owing to the wide bandgap and transparency. The low-temperature growth of ZnO thin films expands diverse applications, such as growth on glass and organic materials, and it is also cost effective. However, the optical and electrical properties of ZnO films grown at low temperatures may be inferior owing to their low crystallinity and impurities. In this study, ZnO thin films were prepared by atomic layer deposition on SiO2 and glass substrates in the temperature range of 46-141℃. All films had a hexagonal würtzite structure. The carrier concentration and electrical conductivity were also investigated. The low-temperature grown films showed similar carrier concentration (a few 1019 cm−3 at 141°C), but possessed lower electrical conductivity compared to high-temperature (>200°C) grown films. The optical transmittance of 20 nm thin ZnO film reached approximately 90% under visible light irradiation. Additionally, bandgap energies in the range of 3.23-3.28 eV were determined from the Tauc plot. Overall, the optical properties were comparable to those of ZnO films grown at high temperature.