Quantum cascade laser is one of the most sophisticated semiconductor devices. Its technology requires extremely high precision and layers quality. Device performance is limited by thermal extraction form laser core. One of solutions is to apply highly resistivity epitaxial material acting as insulating layer on top of the QCL. Present work describes consequent steps of elaboration of MOVPE technology of Fe-compensated InP layers for further applications in quantum cascade lasers.

Abstract Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.

In this study, an analysis of the optical performance of two types of distributed Bragg reflector structures based on GaAs and InP material systems was carried out. The structures were designed for maximum performance at 4 µm with their reflectivity achieving between 80 and 90% with eight pairs of constituent layers. To further enhance the performance of these structures, additional Au layers were added at the bottom of the structure with Ti pre-coating applied to improve the adhesivity of the Au to the semiconductor substrate. The optimal range of Ti layer thickness resulting in the improvement of the maximum reflectivity was determined to be in between 5 and 15 nm.