One of the key parameters determining detection properties of silicon PIN detector structures (p⁺-ν-n⁺ or n⁺-ν-p⁺) is minority carrier diffusion length in p-n junction regions p-n (p⁺-ν or n⁺-ν). The parameter concerned strongly depends on quality of the starting material and technological processes conducted and has a significant impact on detector parameters, in particular dark current intensity. Thus, the parameter must be determined in order to optimise the design and technology of detectors.

The paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ₁ = 500 nm (silicon penetration depth of around 0.9 μm) and λ₂ = 900 nm (silicon penetration depth of around 33 μm). The value of diffusion length was determined by analysing the spatial distribution of optical carrier generation and values of photoelectric currents.

In this paper our results of investigation on a pump power combiner in a configuration of 7×1 are presented. The performed combiner, with pump power of 80–85% transmission level, was successfully applied in a thulium doped fibre laser. The performed all-fibre laser setup reached a total CW output power of 6.42 W, achieving the efficiency on a 32.1% level

We report on the status of long-wave infrared Auger suppressed HgCdTe multilayer structures grown on GaAs substrates designed for high operating temperature condition: 200-300 K exhibiting, detectivity -10¹¹ cmHz^1/2/W, time response within a –120 ps range at 230 K. Abnormal responsivity within the range of -30 A/W for electrical area 30×30 μm² under reverse bias V = 150 mV is reported. Maximum extraction coefficient of -2.3 was estimated for analysed structures.

The design and performance analysis of a 1310/1550-nm wavelength division demultiplexer with tapered geometry based on InP/InGaAsP multimode interference (MMI) coupler has been carried out. Wavelength response of demultiplexer of conventional MMI and tapered input and tapered output (tapered I/O) waveguides geometry of the MMI have been discussed. The demultiplexing function has been first performed by choosing a suitable refractive index of the guiding region and geometrical parameters such as the width and length of MMI structure have been achieved. Access width of tapered I/O waveguides have been adjusted to give a low insertion loss (IL) and high extinction ratio (ER) for the considered wavelengths of 1310 nm and 1550 nm. The total size of the demultiplexer has been significantly reduced over the existing MMI devices. Numerical simulations with finite difference beam propagation method are applied to design and optimize the operation of the proposed demultiplexer.

This paper presents the implementation of a thinned fibre Bragg grating as a fuel adulteration sensor for volatile organic compounds. The proposed sensor can detect upto 10% adulteration of benzene, toluene and xylene: hydrocarbons precisely, whereas traditional methods can detect only upto 20% adulteration. The results obtained from the experiments are verified using Finite Difference Time Domain method. It is found that experimental results have very less deviation from simulation results. The proposed sensor provides us with the new possibility that may have commercial application, as well.

In this work studies on propagation properties of a microstructured polymer optical fibre infiltrated with a nematic liquid crystal are presented. Specifically, the influence of an infiltration method on the LC molecular alignment inside fibre air-channels and, thus, on light guidance is discussed. Switching between propagation mechanisms, namely the transition from modified total internal reflection (mTIR) to the photonic bandgap effect obtained by varying external temperature is also demonstrated.

Worldwide commercial interest in the production of cerium doped yttrium aluminium garnet (YAG:Ce) phosphors is reflected in the widespread use of white light emitting devices. Despite of the fact that YAG:Ce is considered a “cool phosphor” it is the most important in white LED technology. This article reviews the developed techniques for producing phosphors with superior photoluminescence efficiency, including solid-state reaction, sol-gel and (co)precipitation methods. Also, by co-doping with rare earth elements, a red/blue shift is reached in the spectrum. The characteristics of YAG:Ce phosphors are investigated because the properties of the phosphors are strongly influenced by the synthesis routes and the sintering temperature treatment. After the phase analysis, morphology and emission studies of the phosphors there may be seen the conditions when the transition from the amorphous phase to the crystalline phase appears, when luminescent properties are influenced by the crystalline form, purity, average size of the particles, co-doping and so on.