The paper reports the consequences of lanthanum modifications of barium bismuth niobiate (BaBi2Nb2O9) ceramics. The discussed materials were prepared by solid state synthesis and a one-step sintering process. The investigations are focused on dielectric aspects of the modification. The presented results reveal that the trivalent lanthanum ions incorporate twovalent barium ions, which is connected with the creation of A-site cationic vacancies as well as oxygen vacancies. Such a scenario results in significant decreasing in grain boundaries resistivity. The activation energy of grain boundaries conductivity is significantly reduced in the case of lanthanum admixture.
Crystals of PbTiO3 and 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 were obtained by the flux growth method whereas crystals of (Na0.5Bi0.5)TiO3 were growth by the Czochralski method. Raman spectroscopy and polarized light microscopy were performed at room temperature. The Raman spectra of 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 shown significant changes comparing to the base materials PbTiO3 and (Na0.5Bi0.5)TiO3. A domain structure was investigated by use polarized light microscopy. Dielectric permittivity measurements were carried out in the temperature range from 20°C to 550°C and a frequency from 1 kHz to 1 MHz. These showed higher dielectric permittivity for the crystals 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 than the source materials PbTiO3 and (Na0.5Bi0.5)TiO3.
The high value of dielectric constant makes it possible to applied 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 as efficient dielectric medium in a capacitors. The small size of the domain structure with the easy possibility of switching by application of an external electric field, give opportunities to apply these materials to FRAM memory applications. Moreover, the high sensitivity of these materials to the surrounding gases e.g. ammonia, chlorine, hydrogen, etc., allows the construction of sensor devices.
Polycrystalline samples BaTiO3 and the solid solutions Ba0.9Sr0.1TiO3, Ba0.9Sr0.1Ti0.9Sn0.1O3, Ba0.9Sr0.1Ti0.8Sn0.2O3 were obtained by means of a mechanochemical treatment based on the high-energy ball milling technique and next a high temperature solid state reaction method. The influence of synthesis condition on microstructural, dielectric and ferroelectric properties of obtained solid solutions were investigated. The structure and morphology of the investigated samples were characterized by an X-ray diffraction (XRD) and scanning electron microscopy (SEM). The characterization of electrical properties of the ceramics within the temperature range from –130°C to 250°C were performed by means of a dielectric spectroscopy method at the frequency ranging from 0.1 Hz to 10 MHz. The diffusion of the paraelectric – ferroelectric phase transition and dielectric relaxation for ceramic samples are described.
The work three ceramic compositions based on PbZr0.49Ti0.51O3 doped with manganese (Mn), antimony (Sb), lanthanum (La) and tungsten (W) were obtained. The introduction of a set of admixtures was aimed at improving the sinterability of ceramic materials and optimizing its electrophysical parameters. Multi-component materials of the PZT-type with a general formula: Pb(Zr0.49Ti0.51)0.94Mn0.021Sb0.016LayWzO3 (where y from 0.008 to 0.012 and z from 0.012 to 0.014) were prepared by the conventional mixed oxide method. After mixing and drying the powder mixtures were calcined in air at 850°C for 4 h, while densification of the powders was carried out by the free sintering method at 1150°C for 2 h. The final steps of technology were grinding, polishing, annealing and putting silver paste electrodes onto both surfaces of the samples for electrical testing.
XRD, SEM, EDS, dielectric, ferroelectric, piezoelectric properties and DC electrical conductivity of the obtained ceramic compositions were carried out. X-ray tests of the crystal structure conducted at room temperature have shown that all obtained the PZT-type materials were a single phase (perovskite type) without the presence of a foreign phase. Symmetry of the crystal lattice was identified as space group P4mm. Temperature dielectric studies have shown high values of dielectric permittivity and low dielectric loss. The presented physical properties of ceramic samples based on PZT confirm their predisposition for application in modern microelectronic and micromechatronic applications.
The paper presents the technology and basic properties of three compositions of lead-free ceramics: (i) (K0.44Na0.52Li0.04)NbO3, (ii) (K0.44Na0.52Li0.04)NbO3+0.5%mol Nd2O3 and (iii) (K0.44Na0.52Li0.04)NbO3+0.5%mol Pr2O3. Powders of the designed compositions based on KNLN were obtained with the classic ceramic technology, as a result of solid phase synthesis, from a mixture of simple oxides and carbonates. The synthesis of ceramic powders was carried out at Ts = 900°C for ts = 4 h, while compaction by free sintering at Tsint = 1100°C for tsint = 2 h.
XRD studies have shown that doping with praseodymium and neodymium promotes the formation of the tetragonal phase in the base composition (K0.44Na0.52Li0.04)NbO3 at lower temperatures. On the other hand, microstructural tests have shown that the admixture of neodymium and praseodymium improves the sinterability of ceramic samples during the technological process; however, the ceramic samples still exhibit high porosity.