In this work, two thermal- and air-stable, hole transporting materials (HTM) in perovskite solar cells are analyzed. Those obtained and investigated materials were two polyazomethines: the first one with three thiophene rings and 3,3′-dimethoxybenzidine moieties (S9) and the second one with three thiophene rings and fluorene moieties (S7). Furthermore, presented polyazomethines were characterized by Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, atomic force microscopy (AFM) and thermogravimetric analysis (TGA) experiments. Both polyazomethines (S7 and S9) possessed good thermal stability with a 5% weight loss at 406 and 377°C, respectively. The conductivity of S7 was two orders of magnitude higher than for S9 polymer (2.7 × 10−8 S/cm, and 2.6 × 10−10 S/cm, respectively). Moreover, polyazomethine S9 exhibited 31 nm bathochromic shift of the absorption band maximum compared to S7.
Obtained perovskite was investigated by UV–vis and XRD. Electrical parameters of perovskite solar cells (PSC) were investigated at Standard Test Conditions (STC). It was found that both polyazomethines protect perovskite which is confirmed by ageing test where Voc did not decrease significantly for solar cells with HTM in contrast to solar cell without hole conductor, where Voc decrease was substantial. The best photoconversion efficiency (PCE = 6.9%), among two investigated in this work polyazomethines, was obtained for device with the following architectures FTO/TiO2/TiO2 + perovskite/S7/Au. Stability test proved the procreative effects of polyazomethines on perovskite absorber.
Crystals of PbTiO3 and 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 were obtained by the flux growth method whereas crystals of (Na0.5Bi0.5)TiO3 were growth by the Czochralski method. Raman spectroscopy and polarized light microscopy were performed at room temperature. The Raman spectra of 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 shown significant changes comparing to the base materials PbTiO3 and (Na0.5Bi0.5)TiO3. A domain structure was investigated by use polarized light microscopy. Dielectric permittivity measurements were carried out in the temperature range from 20°C to 550°C and a frequency from 1 kHz to 1 MHz. These showed higher dielectric permittivity for the crystals 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 than the source materials PbTiO3 and (Na0.5Bi0.5)TiO3.
The high value of dielectric constant makes it possible to applied 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 as efficient dielectric medium in a capacitors. The small size of the domain structure with the easy possibility of switching by application of an external electric field, give opportunities to apply these materials to FRAM memory applications. Moreover, the high sensitivity of these materials to the surrounding gases e.g. ammonia, chlorine, hydrogen, etc., allows the construction of sensor devices.
Thin films of crystallized LaCoO3 were grown on Si substrate by Pulsed Laser Deposition at different temperatures (750°C, 850°C and 1000°C). The structural characterization of the LaCoO3 thin films was done by combining several techniques: Scanning Electron Microscopy (SEM), Atomic Force Microscope (AFM), Transmission Electron Microscopy (TEM) and Grazing Incidence X-Ray Diffraction (GIXRD). The thin films crystallized in the expected rhombohedral phase whatever the deposition temperature, with an increase of crystallite size from 70 nm at 750°C to 100 nm at 1000°C, and an average thickness of the thin films of less than 200 nm. At 850°C and 1000°C, the thin films are crack-free, and with a lower number of droplets than the film deposited at 750°C. The grains of LaCoO3 film deposited at 850°C are columnar, with a triangular termination. At 1000°C, an intermediate layer of La2Si2O7 was observed, indicating diffusion of Si into the deposited film.
Three low molecular weight compounds bearing carbazole units (1,6-di{3-[2-(4-methylphenyl)vinyl]carbazol-9-yl}hexane and 9,9'-di{6-[3-(2-(4-methylphenyl)vinyl)-9-carbazol-9-yl]hexyl}-[3,3']bicarbazole) and phenoxazine structure (10-butyl-3,7-diphenylphenoxazine) were tested as hole-transporting materials in perovskite solar cells. Two of them were successfully applied as hole transporting layers in electroluminescent light emitted diodes. The examined compounds were high-thermally stable with decomposition temperature found at the range of 280–419 °C. Additionally, DSC measurement revealed that they can be converted into amorphous materials. The compounds possess adequate ionization potentials, to perovskite energy levels, being in the range of 5.15–5.36 eV. The significant increase in power conversion efficiency from 1.60% in the case of a device without hole-transporting layer, to 5.31% for device with 1,6-di{3-[2-(4-methylphenyl)vinyl]carbazol-9- yl}hexane was observed.
The work three ceramic compositions based on PbZr0.49Ti0.51O3 doped with manganese (Mn), antimony (Sb), lanthanum (La) and tungsten (W) were obtained. The introduction of a set of admixtures was aimed at improving the sinterability of ceramic materials and optimizing its electrophysical parameters. Multi-component materials of the PZT-type with a general formula: Pb(Zr0.49Ti0.51)0.94Mn0.021Sb0.016LayWzO3 (where y from 0.008 to 0.012 and z from 0.012 to 0.014) were prepared by the conventional mixed oxide method. After mixing and drying the powder mixtures were calcined in air at 850°C for 4 h, while densification of the powders was carried out by the free sintering method at 1150°C for 2 h. The final steps of technology were grinding, polishing, annealing and putting silver paste electrodes onto both surfaces of the samples for electrical testing.
XRD, SEM, EDS, dielectric, ferroelectric, piezoelectric properties and DC electrical conductivity of the obtained ceramic compositions were carried out. X-ray tests of the crystal structure conducted at room temperature have shown that all obtained the PZT-type materials were a single phase (perovskite type) without the presence of a foreign phase. Symmetry of the crystal lattice was identified as space group P4mm. Temperature dielectric studies have shown high values of dielectric permittivity and low dielectric loss. The presented physical properties of ceramic samples based on PZT confirm their predisposition for application in modern microelectronic and micromechatronic applications.
A SrTiO3 electroceramic with perovskite structure was produced by the calcination of a mixture of SrCO3 and TiO2 intensively grounded by high energy milling. For this purpose, raw materials were mixed in stoichiometric amounts in a planetary type mill; the obtained powder mixture was calcined for 2 h at temperatures between 800 and 1300°C. Samples resulting from the calcination were characterized by XRD, FTIR, SEM analysis and electrical measurements. From XRD, it was determined that the SrTiO3 formed presents the cubic structure of perovskite. The complete reaction for SrTiO3 compound formation occurs at 1200°C. Micrograph observations indicate the presence of a homogeneous microstructure with tiny grain size. The measured values of electrical resistivity were within the typical range of insulating materials.